Small signal analysis of MPCVD diamond Schottky diodes

Mendes, Joana Catarina; Gomes, Henrique L.; Trippe, S.C.; Mukherjee, Debarati; Pereira, L.

doi:10.1016/j.diamond.2019.02.008

Cited by 8 publications

(2 citation statements)

References 51 publications

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“…However, they did not analyze the mechanism of charge current transport, which is one of the goals of this study. Other authors [ 22 , 23 , 24 ] relate the electrical properties of undoped diamond layers mainly to the sp

carbon phase content. It should be noted, however, that this phase is generally highly hydrogenated.…”

Section: Introductionmentioning

confidence: 99%

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Łoś

Fabisiak

Paprocki

et al. 2021

Sensors

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The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies Ea which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of 9×1013 to 5×1014eV−1cm−3 depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.

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carbon phase content. It should be noted, however, that this phase is generally highly hydrogenated.…”

Section: Introductionmentioning

confidence: 99%

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Łoś

Fabisiak

Paprocki

et al. 2021

Sensors

View full text Add to dashboard Cite

show abstract

“…Again this is detrimental for electric passivation or heat extraction. On one side, if the density of grain boundaries is high enough, the latter may provide channels through which the charge carriers can flow [30]; on the other side, the grain boundaries induce phonon scattering and also compromise the thermal conductivity of the diamond film [31,32].…”

Section: Introductionmentioning

confidence: 99%

Deposition of diamond films on single crystalline silicon carbide substrates

Mukherjee

Oliveira

Trippe

et al. 2020

Diamond and Related Materials

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Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes

Iwao

Sittimart

Yoshitake

et al. 2022

Physica Status Solidi (a)

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Pseudovertical Schottky barrier diodes (SBDs) are fabricated on a single‐crystal diamond substrate. Herein, the structural and electrical influence of laser‐induced graphitization which takes place during the laser‐dicing process is investigated. Before laser irradiation, the fabricated SBDs show a high rectifying ratio of more than 11 orders at ±10 V and undetectable leakage current. Ideality factor (n) and Schottky barrier height (ϕ b) are estimated to be 1.09 and 1.35 eV, respectively. After laser irradiation, the SBDs still exhibit good diode behavior, in which n and ϕ b values slightly change by 10%. Leakage current is increased about two orders of magnitude and breakdown voltage is degraded from 940 to 375 V due to the presence of graphite debris. After removing the graphite debris utilizing the oxygen plasma cleaning process through an inductively coupled plasma (ICP) system, all SBDs are recovered back to typical diode characteristics. It is found that strain and surface defects that may be introduced during laser dicing and post‐ICP etching do not severely influence SBD characteristics.

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Small signal analysis of MPCVD diamond Schottky diodes

Cited by 8 publications

References 51 publications

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Deposition of diamond films on single crystalline silicon carbide substrates

Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes

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