Comparison of the electrical behavior of Schottky diodes built on the nucleation and growth surfaces of polycrystalline diamond

Madaleno, J. C.; Trippe, S.C.; Pereira, L.

doi:10.1016/j.diamond.2006.11.019

Cited by 10 publications

(5 citation statements)

References 10 publications

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“…Therefore, it is relevant to optimize the structure of the UNCD films, in terms of graphite-diamond phases, which according to the results presented above can be achieved by optimizing the filament-substrate distance and the substrate surface temperature. The experimental evidence shown in this paper, indicates that being able to change the sheet resistance of the UNCD films may provide the bases for application of these films to Schottky and/or thin film transistor devices, since hydrogenated bulk diamond and polycrystalline diamond (MCD) have been used as active layer for those kind of devices [24][25][26][27].The current problem with yet non-optimized UNCD films relates to the low surface resistance (mΩ), while all the devices such as FETs and MISFET that have been fabricated with hydrogenated surface exhibit resistance in the order of (kΩ-MΩ). However, it is expected that the sheet resistance of the UNCD films can be increased by tailoring the grain boundaries chemical bonds, as a promising option, which is currently being explored.…”

Section: Resultsmentioning

confidence: 93%

Low temperature hot filament chemical vapor deposition of Ultrananocrystalline Diamond films with tunable sheet resistance for electronic power devices

Alcantar-Peña

Montes

Arellano-Jiménez

et al. 2016

Diamond and Related Materials

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This paper describes the results from systematic experiments performed to investigate the influence of different substrate-filaments distances, surface-substrate temperatures and reaction of precursors during the growth of Ultrananocrystalline Diamond (UNCD) films via the hot filament chemical vapor deposition (HFCVD) process. The experimental results provide valuable information to understand the important role of key molecules (CHx, x=1, 2, 3) and atoms (H), resulting from the cracking of precursor molecules (CH4, H2) on the hot surface of the filaments, and the contribution of argon (Ar) inert gas atoms, all interacting on the surface of the substrates when using different filaments-substrate distances to produce films with different structures and properties. The interaction of the cracked molecular and atomic species at different filamentssubstrate distances, play a critical role in the nucleation and growth of films with different structures, as observed by complementary analytical techniques. Films grown at 5, 15, and 30 mm filaments-substrate distances exhibit graphite-disordered graphene phases, while those grown at 20 mm distances exhibit mixed large UNCD-minor graphite mixed phases, and those grown at 25 and 35 mm distances exhibit pure UNCD phase. UNCD films grown at ~ 600 ˚C exhibit grain boundaries with sp 2 and Trans-Polyacetylene (TP-A) dangling chemical bonds and low sheet resistance (~5 ), while UNCD films grown at relativity low temperature (~490 °C) exhibit high sheet resistance (~8 M) and more TP-A dangling bonds. The results presented in this paper indicate that UNCD and mixed UNCD/disordered graphene/graphite films can be grown with tailored resistivity enabling potential applications in electronic power devices.

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Section: Resultsmentioning

confidence: 93%

Low temperature hot filament chemical vapor deposition of Ultrananocrystalline Diamond films with tunable sheet resistance for electronic power devices

Alcantar-Peña

Montes

Arellano-Jiménez

et al. 2016

Diamond and Related Materials

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“…Commonly in the literature, CND layers with interesting electrical properties were synthesised with thickness of few hundreds of nanometres to several micrometers [4,5,6]. It was although related that polycrystalline diamond features decay with the thickness especially on ultrathin film (<150 nm).…”

Section: Introductionmentioning

confidence: 99%

Growth optimization of columnar nanostructured diamond films with high electrical performances for SOD applications

Lions¹,

Saada²,

Pinault³

et al. 2010

AIP Conference Proceedings

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“…A diamond has an excellent thermal conductivity (2000-2200 W/mꞏK), five times that of copper, which allows it to transfer Joule heat and friction heat rapidly during the friction fatigue process of current-carrying contacts [7,8]. Furthermore, diamond has a low thermal expansion coefficient, which means that it will not deform to cause harmful stresses in the matrix [9,10].…”

Section: Introductionmentioning

confidence: 99%

The effect of current-carrying friction on the internal crystal phase of diamond coatings on WC-Co substrate

Cao,

Chen

2023

J. Phys.: Conf. Ser.

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A great deal of attention has been paid to friction and wear caused by current-carrying friction. In this study, diamond coatings were deposited on the cemented carbides (WC-Co) substrate by hot filament chemical vapor deposition method. Although the diamond coating possessed a higher roughness than the WC-Co substrate, it was effective at reducing the friction coefficient and improving the effectiveness of WC-Co in the current-carrying friction process. In the presence of 1 A, the diamond coating exhibited a lower friction coefficient than the WC-Co matrix, and the diamond transformed into graphite as a result. The results show that diamond-coated surfaces have a better wear condition than WC-Co.

show abstract

Comparison of the electrical behavior of Schottky diodes built on the nucleation and growth surfaces of polycrystalline diamond

Cited by 10 publications

References 10 publications

Low temperature hot filament chemical vapor deposition of Ultrananocrystalline Diamond films with tunable sheet resistance for electronic power devices

Low temperature hot filament chemical vapor deposition of Ultrananocrystalline Diamond films with tunable sheet resistance for electronic power devices

Growth optimization of columnar nanostructured diamond films with high electrical performances for SOD applications

The effect of current-carrying friction on the internal crystal phase of diamond coatings on WC-Co substrate

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