Endometriosis (EM) is defined as endometrial tissues found outside the uterus. Growth and development of endometriotic cells in ectopic sites can be promoted via multiple pathways, including MAPK/MEK/ERK, PI3K/Akt/mTOR, NF‐κB, Rho/ROCK, reactive oxidative stress, tumor necrosis factor, transforming growth factor‐β, Wnt/β‐catenin, vascular endothelial growth factor, estrogen, and cytokines. The underlying pathophysiological mechanisms include proliferation, apoptosis, autophagy, migration, invasion, fibrosis, angiogenesis, oxidative stress, inflammation, and immune escape. Current medical treatments for EM are mainly hormonal and symptomatic, and thus the development of new, effective, and safe pharmaceuticals targeting specific molecular and signaling pathways is needed. Here, we systematically reviewed the literature focused on pharmaceuticals that specifically target the molecular and signaling pathways involved in the pathophysiology of EM. Potential drug targets, their upstream and downstream molecules with key aberrant signaling, and the regulatory mechanisms promoting the growth and development of endometriotic cells and tissues were discussed. Hormonal pharmaceuticals, including melatonin, exerts proapoptotic via regulating matrix metallopeptidase activity while nonhormonal pharmaceutical sorafenib exerts antiproliferative effect via MAPK/ERK pathway and antiangiogenesis activity via VEGF/VEGFR pathway. N‐acetyl cysteine, curcumin, and ginsenoside exert antioxidant and anti‐inflammatory effects via radical scavenging activity. Natural products have high efficacy with minimal side effects; for example, resveratrol and epigallocatechin gallate have multiple targets and provide synergistic efficacy to resolve the complexity of the pathophysiology of EM, showing promising efficacy in treating EM. Although new medical treatments are currently being developed, more detailed pharmacological studies and large sample size clinical trials are needed to confirm the efficacy and safety of these treatments in the near future.

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This work describes the high-temperature performance and avalanche capability of normally-OFF 1.2-kV-class vertical gallium nitride (GaN) fin-channel junction field-effect transistors (Fin-JFETs). The GaN Fin-JFETs were fabricated by NexGen Power Systems, Inc. on 100-mm GaN-on-GaN wafers. The threshold voltage (V TH) is over 2 V with less than 0.15 V shift from 25 • C to 200 • C. The specific ON-resistance (R ON) increases from 0.82 at 25 • C to 1.8 m•cm 2 at 200 • C. The thermal stability of V TH and R ON are superior to the values reported in SiC MOSFETs and JFETs. At 200 • C, the gate leakage and drain leakage currents remain below 100 μA at −7-V gate bias and 1200-V drain bias, respectively. The gate leakage current mechanism is consistent with carrier hopping across the lateral p-n junction. The high-bias drain leakage current can be well described by the Poole-Frenkel (PF) emission model. An avalanche breakdown voltage (BV AVA) with positive temperature coefficient is shown in both the quasistatic I-V sweep and the unclamped inductive switching (UIS) tests. The UIS tests also reveal a BV AVA over 1700 V and a critical avalanche energy (E AVA) of 7.44 J/cm 2 , with the E AVA comparable to that of state-of-the-art SiC MOSFETs. These results show the great potentials of vertical GaN Fin-JFETs for medium-voltage power electronics applications.

Fabricating heterojunction photocatalysts for H2 production is promising for the development of clean energy. For boosting the photocatalytic activity, modulating the heterojunction interface can facilitate the electron–hole separation and solar energy utilization, but it is highly challenging in synthesis. In this work, by facilely exfoliating the bulk C3N5, ultrathin C3N5 nanosheets (N-CN) with large surface area, improved light absorption, and efficient charge transport were synthesized and further applied to the construction of NH2-UiO-66/N-CN heterojunctions. The optimized NH2-UiO-66/N-CN-2 exhibits high hydrogen evolution rate and cycling stability with Pt as the cocatalyst. Combined with the experimental results, the density functional theory calculation reveals that the high photocatalytic performance is attributed to the promoted photogenerated carrier transfer by the formation of well-contacted and stable Z-scheme heterojunction interface. This contribution renders an insight into the modulation of the heterojunction interface for enhancing the activity of MOF-based photocatalysts.

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Anthracite is a plentiful and affordable natural resource with a high coalification degree and many graphene-like sp2 carbon crystallites, which is fascinating for the development of novel coal-based carbon materials to achieve the value-added utilization of coal resources. In this work, a facile one-step ultrasonic physical tailoring procedure for the fabrication of blue luminescent coal-derived graphene quantum dots (C-GQDs) was exploited using Taixi Anthracite as the carbon source. The as-prepared C-GQDs possess uniformly distributed sizes and diameters of 3.2 ± 1.0 nm, and their aqueous solution can remain in stable homogeneous phase even after 2 months at room temperature. Moreover, we found that the C-GQDs exhibit two different distinctive emission modes. The evolution of the surface states and the electronic structure analysis revealed that two different types of fluorescence centers could be ascribed to nanosized sp2 carbon domains and oxygen functional group defects. Meanwhile, unique electronic and chemical properties endow the C-GQDs with a sensitive response to Cu2+. C-GQDs were demonstrated as potential fluorescent materials for reliable, label-free, and selective detection of Cu2+, showing great promise in real-world sensor applications.