Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

Liu, Jingcun; Zhang, Ruizhe; Xiao, Ming; Pidaparthi, Subhash; Cui, Hao; Edwards, Andrew; Baubutr, Lek; Drowley, Cliff; Zhang, Yuhao

doi:10.1109/tpel.2021.3067019

Cited by 47 publications

(40 citation statements)

References 24 publications

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“…In last decade, tremendous progresses have been witnessed toward the commercialization of lateral AlGaN/GaN power devices rated at 100-650 V [2]. Concurrently, vertical GaN devices are under active developments for miniaturized power switching applications [9], as the vertical structure is more favorable to realize high current capacity, high power density, and superior thermal performance [10], [11]. However, the commercialization of the vertical GaN-on-GaN power devices has been hindered by the high-cost and small-diameter of the bulk substrate materials [12].…”

Section: Introductionmentioning

confidence: 99%

“…Alternatively, the highquality GaN films with low dislocation density could be epitaxially grown on the mature sapphire substrate [16], [18]. However, the fundamental limitation of the sapphire substrate is its poor heat dissipation capability with a low thermal conductivity (kT) [19], which would seriously affect the device's electrostatic characteristics and electrothermal ruggedness, especially for thermal-resistance and surge-current capabilities [9], [20], [21]. Therefore, improving the thermalrelated performances of GaN-on-sapphire devices remain a formidable challenge.…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Wei

Zhou

et al. 2022

IEEE J. Electron Devices Soc.

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In this letter, we have successfully transferred the 4inch crack-free GaN films from sapphire substrate to conductive silicon wafer by employing eutectic bonding and laser lift-off (LLO) techniques. The resultant 1-mm 2 fully-vertical GaN Schottky barrier diodes (SBDs) exhibit a high current swing of 10 9 , a low ideality factor of 1.03 and a high forward current of 10 A. Meanwhile, a decent breakdown voltage of 312 V is achieved, which is over 3 times higher than that of control device without performing epitaxial lift-off. Most importantly, such rectifiers show significantly enhanced electrothermal ruggedness, achieving a high surge-current density of 2.6 kA/cm 2 and a low thermal resistance of 0.77 Kcm 2 /W. In addition, the excellent power rectification capability with a low reverse recovery time of 14 ns is obtained under high-speed switching condition with a high current ramp rate (di/dt) of 275 A/µs, implying the desired functionality of the LLO-vertical device architecture. These results thus present the great potentials of the substrate-transferred GaN SBDs for high-power and high-efficiency applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Wei

Zhou

et al. 2022

IEEE J. Electron Devices Soc.

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“…5(a) and (b) show the surge-current test circuit and the prototype, respectively. The working principle and implementation of the test circuit are detailed in (16,20). A 10-ms-wide half-sinusoidal current waveform was produced by a resonance circuit comprising a 2.2-mH inductor and a 4.7-mF capacitor).…”

Section: Surge Current Testmentioning

confidence: 99%

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?

et al. 2021

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Ultra-wide bandgap gallium oxide (Ga2O3) devices have recently emerged as promising candidates for power and RF electronics. The low thermal conductivity of Ga2O3 has arguably been the most serious concern for these devices. Despite many simulation studies, there still lacks an experimental report on the thermal resistance and electrothermal ruggedness of a large-area, packaged Ga2O3 device. Recently, our team for the first time demonstrated largearea Ga2O3 devices with different packaging configurations and measured the thermal resistance and surge current capabilities of these packaged Ga2O3 devices. This paper reviews the key results in our efforts. It is shown that, contrary to some popular belief, Ga2O3 devices with proper packaging can achieve high thermal performance in both short transients and the steady state. The double-side-packaged Ga2O3 Schottky rectifiers show a junctionto-case thermal resistance lower than that of the similarly-rated commercial SiC Schottky rectifiers. In addition, these Ga2O3 rectifiers can survive a higher peak surge current as compared to SiC rectifiers. The critical enabler for these excellent performances is the direct junction cooling with minimal heat going through the Ga2O3 chip. Our work proves the viability of Ga2O3 devices for high power applications and manifests the significance of packaging for their die-level thermal management.

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“…Compared with SBDs, MPS diodes can exhibit bipolar operation mode at forward bias, lower reverse leakage current, and higher reverse breakdown voltage by reducing the electric field at the interface of the Schottky junction. Besides, benefited from the ohmic contact on the p-GaN region, MPS diodes can demonstrate avalanche and surge capabilities, which are of great significance for their practical applications in power circuits and systems [15]- [17].…”

mentioning

confidence: 99%

“…Park et al analyzed the physical mechanism behind the high forward pn-junction turn-on voltage in 4H-SiC MPS diode, revealing that the turn-on voltage is closely correlated with the potential difference between the Schottky junction and the pn junction within a MPS diode [26]. Recently, Liu et al experimentally verified the high surge current robustness in GaN vertical pn diodes and their significantly smaller reverse recovery as compared to SiC diodes, which makes GaN MPS diodes particularly attractive for fast switching applications [15]. While GaN-based MPS diodes have been successfully…”

mentioning

confidence: 99%

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Wang

Chen

et al. 2022

IEEE J. Electron Devices Soc.

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In this paper, we systematically investigated the impact of the key structural parameters on the reverse and forward characteristics of gallium nitride (GaN) based vertical merged pn-Schottky (MPS) diode by numerical simulation. In comparison with conventional GaN-based vertical Schottky barrier diode, the MPS structure can suppress the high electric field at the Schottky interface with the inserted p-GaN, thereby enhancing the reverse breakdown characteristics. However, the adoption of the p-GaN structure can result in a locally crowded electric field at reserve bias condition and thus a premature breakdown of the device. Moreover, the p-GaN structure depletes the vertical channel region, which may degrade the onperformance at forward bias condition. We found that the doping concentration, width, and depth of the p-GaN structure are closely correlated with the electric field distribution at reverse bias and the channel resistance at forward bias, and thus determines the reverse and forward characteristics of the MPS diodes. The unique forward unipolar/bipolar characteristics of the MPS diode was also investigated and discussed systematically. The results can pave the way for the development of GaN power electronic devices towards a compact high-frequency and high-voltage power electronic system.

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Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

Cited by 47 publications

References 24 publications

Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

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Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

Cited by 47 publications

References 24 publications

Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga2O3 Devices?

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

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(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?