(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga<sub>2</sub>O<sub>3</sub> Devices?

Zhang, Yuhao; Wang, Boyan; Xiao, Ming; Spencer, Joseph; Zhang, Ruizhe; Knoll, Jack; DiMarino, Christina; Lü, Gongxuan; Buttay, Cyril

doi:10.1149/10405.0021ecst

Cited by 3 publications

(3 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Electrothermal mixedmode simulations revealed that with the double-side package heat is mainly extracted through the junction side in the transient condition; meanwhile, the peak T j is moved from the Schottky contact into the bulk Ga 2 O 3 during the transient heating process (figures 9(c) and (d)). These results illustrate the significance of the package design and cooling configuration on the transient thermal performance and electrothermal ruggedness of Ga 2 O 3 devices [74].…”

Section: Ga 2 O 3 Devicementioning

confidence: 68%

See 1 more Smart Citation

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

show abstract

Section: Ga 2 O 3 Devicementioning

confidence: 68%

“…the encapsulation material and the metal interconnects) also impede the heat flux and result in larger R th [72]. It has been shown throughout the literature that device thermal performance is improved with optimization of device packaging [21,22,24,73,74].…”

Section: Basics Of Power Device/package Thermal Managementmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…reliability, and scalability of the Ga 2 O 3 power devices [6], and hence their competitiveness in power applications.…”

Section: Introductionmentioning

confidence: 99%

RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Chen,

Zhao,

Wei

et al. 2024

Preprint

View full text Add to dashboard Cite

Heterosubstrates have been extensively studied as a method to improve the heat dissipation of GaO devices. In this simulation work, we propose a novel role for p-type available heterosubstrates, as a component of a reduced surface field (RESURF) structure in GaO lateral field-effect transistors (FETs). The RESURF structure can eliminate the electric field crowding and contribute to higher breakdown voltage. Using SiC as an example, the designing strategy for doping concentration and dimensions of the p-type region is systematically studied using TCAD modeling. To mimic realistic devices, the impacts of interface charge and binding interlayer at the GaO /SiC interface are also explored. Additionally, the feasibility of the RESURF structure for high-frequency switching operation is supported by the short time constant (∼0.5 ns) of charging/discharging the p-SiC depletion region. This study demonstrates the great potential of utilizing the electrical properties of heat-dissipating heterosubstrates to achieve a uniform electric field distribution in GaO FETs.

show abstract

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Spencer

Tadjer

Jacobs

et al. 2022

Applied Physics Letters

View full text Add to dashboard Cite

Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration of ∼1017 cm−3 were incorporated during epitaxial growth yielding low-doped (net donor concentration <1014 cm−3) films subsequently implanted with Si, Ge, and Sn. Upon Ohmic contact formation to the implanted regions, sheet resistance values of 314, 926, and 1676 Ω/sq were measured at room temperature for the Si-, Ge-, and Sn-implanted samples, respectively. Room temperature Hall measurements resulted in sheet carrier concentrations and Hall mobilities of 2.13 × 1014 /93, 8.58 × 1013/78, and 5.87 × 1013/63 cm2/(V s), respectively, for these three donor species. Secondary ion mass spectroscopy showed a volumetric dopant concentration of approximately 2 × 1019 cm−3 for the three species, resulting in carrier activation efficiencies of 64.7%, 40.3%, and 28.2% for Si, Ge, and Sn, respectively. Temperature-dependent Hall effect measurements ranging from 15 to 300 K showed a nearly constant carrier concentration in the Si-implanted sample, suggesting the formation of an impurity band indicative of degenerate doping. With a bulk carrier concentration of 1.3 × 1019 cm−3 for the Si implanted sample, a room temperature mobility of 93 cm2/(V s) is among the highest reported in Ga2O3 with a similar carrier concentration. The unimplanted Ga2O3:N regions remained highly resistive after the surrounding areas received implant and activation anneal. These results open the pathway for fabricating Ga2O3 devices through the selective n-type doping in highly resistive epitaxial Ga2O3.

show abstract

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?

Cited by 3 publications

References 36 publications

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Contact Info

Product

Resources

About

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga2O3 Devices?

Cited by 3 publications

References 36 publications

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Contact Info

Product

Resources

About

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?