Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

Zhang, Ruizhe; Kozak, Joseph P.; Xiao, Ming; Liu, Jingcun; Zhang, Yuhao

doi:10.1109/tpel.2020.2993982

Cited by 95 publications

(56 citation statements)

References 21 publications

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“…A customized UIS test setup, as shown in Fig. 8, was built based on our prior work on GaN HEMTs [10]. The device under test (DUT) was in series with an inductor (L) and was initially turned on for a certain time duration to build up a linear current.…”

Section: Uis Testmentioning

confidence: 99%

mentioning

confidence: 99%

“…Another key promise that vertical GaN devices hold is the avalanche robustness, which is highly desired in many power applications such as power grid and motor drive inverters [10]. Due to the lack of a p-n junction connected between source and drain, the GaN HEMT has no or very little avalanche capability and thus requires considerable overvoltage design to handle the surge energy [10]. By contrast, avalanche capability has been widely reported in vertical GaN p-n diodes [11], [12], with an avalanche current (I AVA ) over 50 A and an avalanche energy (E AVA ) over 60 mJ [12].…”

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confidence: 99%

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1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

Liu

Xiao

Zhang

et al. 2021

IEEE Trans. Electron Devices

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This work describes the high-temperature performance and avalanche capability of normally-OFF 1.2-kV-class vertical gallium nitride (GaN) fin-channel junction field-effect transistors (Fin-JFETs). The GaN Fin-JFETs were fabricated by NexGen Power Systems, Inc. on 100-mm GaN-on-GaN wafers. The threshold voltage (V TH) is over 2 V with less than 0.15 V shift from 25 • C to 200 • C. The specific ON-resistance (R ON) increases from 0.82 at 25 • C to 1.8 m•cm 2 at 200 • C. The thermal stability of V TH and R ON are superior to the values reported in SiC MOSFETs and JFETs. At 200 • C, the gate leakage and drain leakage currents remain below 100 μA at −7-V gate bias and 1200-V drain bias, respectively. The gate leakage current mechanism is consistent with carrier hopping across the lateral p-n junction. The high-bias drain leakage current can be well described by the Poole-Frenkel (PF) emission model. An avalanche breakdown voltage (BV AVA) with positive temperature coefficient is shown in both the quasistatic I-V sweep and the unclamped inductive switching (UIS) tests. The UIS tests also reveal a BV AVA over 1700 V and a critical avalanche energy (E AVA) of 7.44 J/cm 2 , with the E AVA comparable to that of state-of-the-art SiC MOSFETs. These results show the great potentials of vertical GaN Fin-JFETs for medium-voltage power electronics applications.

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Section: Uis Testmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

Liu

Xiao

Zhang

et al. 2021

IEEE Trans. Electron Devices

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“…The mixed-mode simulation combines physics-based device models and circuit arrangements, enabling to reveal the device internal dynamics in at any switching transient. Some exemplar mixedmode TCAD simulations for power devices are available in (34)(35)(36). In this work, selfconsistent electrothermal device models are solved in a circuit arrangement consistent with that shown in Fig.…”

Section: Mixed-mode Electrothermal Simulationsmentioning

confidence: 99%

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?

et al. 2021

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Ultra-wide bandgap gallium oxide (Ga2O3) devices have recently emerged as promising candidates for power and RF electronics. The low thermal conductivity of Ga2O3 has arguably been the most serious concern for these devices. Despite many simulation studies, there still lacks an experimental report on the thermal resistance and electrothermal ruggedness of a large-area, packaged Ga2O3 device. Recently, our team for the first time demonstrated largearea Ga2O3 devices with different packaging configurations and measured the thermal resistance and surge current capabilities of these packaged Ga2O3 devices. This paper reviews the key results in our efforts. It is shown that, contrary to some popular belief, Ga2O3 devices with proper packaging can achieve high thermal performance in both short transients and the steady state. The double-side-packaged Ga2O3 Schottky rectifiers show a junctionto-case thermal resistance lower than that of the similarly-rated commercial SiC Schottky rectifiers. In addition, these Ga2O3 rectifiers can survive a higher peak surge current as compared to SiC rectifiers. The critical enabler for these excellent performances is the direct junction cooling with minimal heat going through the Ga2O3 chip. Our work proves the viability of Ga2O3 devices for high power applications and manifests the significance of packaging for their die-level thermal management.

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“…From the FOM1, FOM2, and FOM3, it is not difficult to conclude that the GaN HEMT with part number EPC2021 is better than other GaN HEMTs and Si MOSFETs. Furthermore, it is worth noting that the GaN HEMT has non-avalanche voltage capability because there are no inherent PN junctions that are connected between the source and drain in GaN HEMTs [15,16,33]. Therefore, in the specifications of eGaN HEMTs from EPC Corporation, there is also a specification for a transient voltage capability above the maximum V DS .…”

Section: Comparing Gan Hemt and Si Mosfetmentioning

confidence: 99%

A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

et al. 2020

Energies

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Compared with conventional forward converters, active clamp forward (ACF) converters have many advantages, including lower voltage stress on the primary power devices, the ability to switch at zero voltage, reduced EMI and duty cycle operation above 50%. Thus, it has been the most popular solution for the low bus voltage applications, such as 48 V and 28 V. However, because of the poor performance of Si MOSFETs, the efficiency of active clamp forward converters is difficult to further improved. Focusing on the bus voltage of 28 V with 18~36 V voltage range application, the Gallium Nitride high electron-mobility transistors (GaN HEMT) with ultralow on-resistance, low parasitic capacitances, and no reverse recovery, is incorporated into active clamp forward converters for achieving higher efficiency and power density, in this paper. Meanwhile, the comparative analysis is performed for Si MOSFET and GaN HEMT. In order to demonstrate the feasibility and validity of the proposed solution and comparative analysis, two 18~36 V input, 120 W/12 V output, synchronous rectification prototype with different power devices are built and compared in the lab. The experimental results show the GaN version can achieve the efficiency of 95.45%, which is around 1% higher than its counterpart under the whole load condition and the same power density of 2.2 W/cm3.

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Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

Cited by 95 publications

References 21 publications

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?

A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

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Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

Cited by 95 publications

References 21 publications

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga2O3 Devices?

A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

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(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga₂O₃ Devices?