Recent years have witnessed the rise of graphene and its applications in various electronic devices. Specifically, featuring excellent flexibility, transparency, conductivity, and mechanical robustness, graphene has emerged as a versatile material for flexible electronics. In the past decade, facilitated by various laser processing technologies, including the laser‐treatment‐induced photoreduction of graphene oxides, flexible patterning, hierarchical structuring, heteroatom doping, controllable thinning, etching, and shock of graphene, along with laser‐induced graphene on polyimide, graphene has found broad applications in a wide range of electronic devices, such as power generators, supercapacitors, optoelectronic devices, sensors, and actuators. Here, the recent advancements in the laser fabrication of graphene‐based flexible electronic devices are comprehensively summarized. The various laser fabrication technologies that have been employed for the preparation, processing, and modification of graphene and its derivatives are reviewed. A thorough overview of typical laser‐enabled flexible electronic devices that are based on various graphene sources is presented. With the rapid progress that has been made in the research on graphene preparation methodologies and laser micronanofabrication technologies, graphene‐based electronics may soon undergo fast development.

Ti 3 C 2 T x MXene with an organ-like structure was synthesized from Ti 3 AlC 2 (MAX phase) through the typical hydrofluoric (HF) acid etching method. Ti 3 C 2 T x MXene was further alkaline-treated with a sodium hydroxide solution to obtain alkalized Ti 3 C 2 T x . Room-temperature planar-type gas-and humidity-sensing devices were also fabricated by utilizing Ti 3 C 2 T x MXene and alkalized Ti 3 C 2 T x sensing material based on the dip coating method, respectively. The intercalation of the alkali metal ion (Na + ) and the increase of the surface terminal oxygen−fluorine ratio ([O]/[F]) in Ti 3 C 2 T x can effectively improve humidity-and gas-sensing properties at room temperature. The developed alkalized Ti 3 C 2 T x sensor exhibited excellent humidity-sensing characteristics (approximately 60 times response signal change) in the relative humidity (RH) with a range of 11−95% and considerable NH 3 sensing performance (28.87% response value to 100 ppm of NH 3 ) at room temperature. The improvement of NH 3 and humidity-sensing properties indicated that alkalized Ti 3 C 2 T x has great potential in chemical sensors, especially in NH 3 and humidity sensors. KEYWORDS: MXene, organ-like structure, alkalized Ti 3 C 2 T x , NH 3 and humidity sensing, room temperature

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