This paper details the design, fabrication, and characterization of highly uniform batch-fabricated sidewall etched vertical nanogap tunneling junctions for bio-sensing applications. The device consists of two vertically stacked gold electrodes separated by a partially etched sacrificial spacer layer of sputtered α-Si and Atomic Layer Deposited (ALD) SiO2. A ~10 nm wide air-gap is formed along the sidewall by a controlled dry etch of the spacer. The thickness of the spacer layer can be tuned by adjusting the number of ALD cycles. The rigorous statistical characterization of the ultra-thin spacer films has also been performed. We fabricated nanogap electrodes under two design layouts with different overlap areas and spacer gaps, from ~4.0 nm to ~9.0 nm. Optical measurements reported an average non-uniformity of 0.46 nm (~8%) and 0.56 nm (~30%) in SiO2 and α-Si film thickness respectively. Direct tunneling and Fowler–Nordheim tunneling measurements were done and the barrier potential of the spacer stack was determined to be ~3.5 eV. I–V measurements showed a maximum resistance of 46 × 103 GΩ and the average dielectric breakdown field of the spacer stack was experimentally determined to be ~11 MV/cm.

We present the design, fabrication and response of a humidity sensor based on electrical tunneling through temperature-stabilized nanometer gaps. The sensor consists of two stacked metal electrodes separated by ~2.5 nm of vertical air gap. Upper and lower electrodes rest on separate 1.5 μm thick polyimide patches with nearly identical thermal expansion but different gas absorption characteristics. When exposed to a humidity change, the patch under the bottom electrode swells but the patch under the top electrode does not, as it is covered with a watervapor diffusion barrier ~8 nm of Al2O3. The air gap thus decreases leading to increase in the tunneling current across the junction. The gap however is independent of temperature fluctuations as both patches expand or contract by near equal amounts. Humidity sensor action demonstrates an unassisted reversible resistance reduction Rmax/Rmin ~10 5 when the device is exposed to 20 -90 RH% at a standby DC power consumption of ~0.4 pW. The observed resistance change when subject to a temperature sweep of 25 -60° C @24% RH was ~0.0025% of the full device output range.

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Purpose: We describe new phenomenological illumination-dependent static models of the accommodation deficiency for patients with presbyopia. Such models are suitable for vision restoration with adaptive-optics accommodating eyeglasses and contact lenses. Methods: Data from fifteen participants over the age of 45 and diagnosed with presbyopia was collected. Participants were asked to wear a pair of mechanically-tunable eyeglasses and clearly identify the optotypes corresponding to the LogMAR 0.0 line on Early Treatment of Diabetic Retinopathy Study (ETDRS) charts, by suitably adjusting the optical powers of the lenses on these tunable eyeglasses for each measurement. Seven ETDRS charts, placed at distances from the patients varying from 4 m through 30 cm, were used under three chart illumination levels (75 lx, 500 lx and 800 lx). The optical power of the lenses in the patient-adjusted tunable eyeglasses was subsequently measured using a Shack-Hartman wavefront sensor for each chart, which provided the accommodation deficiency data of the participants. Results: The measured accommodation deficiency data from 15 presbyopes was curve-fitted to a model for each patient. The calculated root-mean-square error values for the fitted models ranged between 0.09 D - 0.67 D over a 3.08 D accommodation stimulus range. Conclusions: The data shows that while accommodation deficiency in humans is a function of the stimulus, it is also strongly dependent on the object illumination and age of the patients. The models adequately describe the relation between static accommodation deficiency, accommodation stimulus and object illumination.

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