No abstract

No abstract

No abstract

No abstract

In this paper, we have presented a device {FTO (Fluorine-doped tin Oxide)/TiO2/hybrid perovskite/Spiro-OMeTAD/Al} of photoconductive material CH3NH3PbBr3 for the photovoltaic applications. TiO2 has been used as an electron transport layer, which plays the vital role of extracting electrons, transporting electrons, blocking holes and also aligned the perfect energy match with CH3NH3PbBr3. The current–voltage (I–V) characteristics of the fabricated device have been analyzed to evaluate the various diode parameters and understand the charge transport properties. We have analyzed of space charge limited conduction (SCLC) region to evaluate the charge carrier mobility and the calculated value was 1.59 × 10−4 cm2 V−1 s−1. The mobility of carrier may also be extract by I–V characteristics with 0–10 V (charge transport graph). The current level in the device increases considerably under light excitation. Furthermore, impedance spectroscopy analysis has been performed to identify the internal circuit parameters of the photoconductive device.

The authors have performed ab-initio calculations for the structural, electronic, optical, elastic and thermal properties of the copper-gallium disulphide (CuGaS 2 ). The accurate full potential linearised augmented plane wave method was used to find the equilibrium structural parameters and to compute the full elastic tensors. They have reported electronic and optical properties with the recently developed density functional theory of Tran and Blaha. Furthermore, optical features such as dielectric functions, refractive indices, extinction coefficient, optical reflectivity, absorption coefficients and optical conductivities were calculated for photon energies up to 30 eV. The thermodynamical properties such as thermal expansion, heat capacity, Debye temperature, entropy and Grüneisen parameter, bulk modulus and hardness were calculated employing the quasi-harmonic Debye model at different temperatures (0-1200 K) and pressures (0-8 GPa) and the results are interpreted. Further, CuGaS 2 solar cell devices have been modelled; device physics and performance parameters were analysed for CdS and ZnSe buffer layers. Simulation results for CuGaS 2 thin layer solar cell show the maximum efficiency (20.5%) with ZnSe as the buffer layer. Most of the investigated parameters are reported for the first time.

No abstract

No abstract