RETRACTED: Structural, electronic, optical, elastic and thermal properties of CdGeP2 with the application in solar cell devices

Gautam, Ruchita; Singh, P.; Sharma, Sheetal; Kumari, Sarita; Verma, Aditya

doi:10.1016/j.mssp.2015.07.005

Cited by 11 publications

(6 citation statements)

References 47 publications

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“…Modelling parameters are shown in Table 2. Literature value of 𝜃 𝐷 are used [43], 𝑐 𝑙 values are in good agreement with reported values [18,44,45] and 𝛼 and 𝜔 0 are consistent with calculations [46]. Values of 𝑁 𝑖𝑜𝑛 are in reasonable agreement to estimated 𝑁 𝐷 from the Fermi-Dirac model presented above.…”

Section: Microscopic Scattering Mechanismssupporting

confidence: 85%

“…One material class that has been interesting to the optics community is II-IV-V2 chalcopyrite crystals due to their high nonlinearity, composition-tunable band gaps, wide transparency windows and high damage threshold [12][13][14][15]. Chalcopyrite crystals have been explored for electromagnetic (EM) screening, spintronic [16,17], and photovoltaic applications [18], making them good as optical and optoelectronic materials. Large-area chalcopyrite crystal growth offers the opportunity to produce devices [19][20][21][22][23], especially frequency converters.…”

Section: Introductionmentioning

confidence: 99%

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Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP₂, ZnGeP₂, and CdSiP₂

et al. 2021

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Terahertz time-domain spectroscopy is employed to investigate temperaturedependent properties of bulk chalcopyrite crystals (CdGeP2, ZnGeP2 and CdSiP2). The complex spectra provide the refraction and absorption as a function of temperature, from which electron-phonon coupling and average phonon energies are extracted and linked to the mechanics of the A-and B-site cations. Also, AC conductivity spectra provide carrier densities and electron scattering times, the temperature dependence of which is associated with unintentional shallow dopants. Temperature dependence of the scattering time are converted into carrier mobility and modeled with microscopic transport mechanisms such as polar optical phonon, acoustic phonons, deformation potential, ionized impurity and dislocation scattering. Hence, analysis links the THz optical and electronic properties to relate microscopic carrier transport and carrier-lattice interactions.

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Section: Microscopic Scattering Mechanismssupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP₂, ZnGeP₂, and CdSiP₂

et al. 2021

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“…Theoretical work of Gautam et al shows that the higher theoretical limit of efficiency of CdGeP 2 based solar cell is 22.6% [30] which is less than the efficiency of Si based solar cell. Because of all the above issues, finding new materials in the ABX 2 family is essential for designing efficient PV devices.…”

Section: Pandey Et Al'smentioning

confidence: 96%

Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Semiconductor for photovoltaics

Kumar,

Nayak,

Chakrabarty

et al. 2019

Preprint

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Using machine learning (ML) approach, we unearthed a new III-V semiconducting material having an optimal bandgap for high efficient photovoltaics with the chemical composition of Gallium-Boron-Phosphide (GaBP 2 , space group: Pna2 1 ). ML predictions are further validated by state of the art ab-initio density functional theory (DFT) simulations. The stoichiometric Heyd-Scuseria-Ernzerhof (HSE) bandgap of GaBP 2 is noted to 1.65 eV, a close ideal value (1.4-1.5 eV) to reach the theoretical Queisser-Shockley limit. The calculated electron mobility is similar to that of silicon. Unlike perovskites, the newly discovered material is thermally, dynamically and mechanically stable. Above all the chemical composition of GaBP 2 are nontoxic and relatively earth-abundant, making it a new generation of PV material. Using ML, we show that with a minimal set of features the bandgap of III-III-V and II-IV-V semiconductor can be predicted up to an RMSE of less than 0.4 eV. We presented a set of scaling laws, which can be used to estimate the bandgap of new III-III-V and II-IV-V semiconductor, with three different crystal phases, within an RMSE of ≈ 0.5 eV.

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“…The real part 1 ()  is related to the dispersive conduct and the imaginary part 2 ()  corresponds to the absorptive conduct of the material. The other optical properties can be directly calculated from 1 () and 2 ()  [15]. Therefore, we calculated real and imaginary part of epsilon, absorption coefficient, reflection index, optical conductivity and extinct coefficient with xx, yy and zz directions (Fig.…”

Section: Optical Propertiesmentioning

confidence: 99%

Physical properties of magnesium nitridophosphate (Mg2PN3) compound

Ayhan

Balcı

2018

AIP Conference Proceedings

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In this work, we investigated structural, electronic and optical properties of orthorhombic Mg 2 PN 3 compound. The calculations were performed with full-potential linearized augmented plane-wave (FP-LAPW) method based on Density Functional Theory by using Wien2k packet. PBE-GGA (Perdew, Burke and Ernzerhof) were selected as exchangecorrelation functional. We calculated cell dimensions, bulk modulus and cohesive energy of this compound. The calculated structural parameters have a good agreement with experimental works. We have also calculate DOS curve, electronic band structure, dielectric function, absorption coefficient and optical conductivity parameters. The DOS and electronic band calculations show that Mg 2 PN 3 has indirect band gap with 5.2 eV value.

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RETRACTED: Structural, electronic, optical, elastic and thermal properties of CdGeP2 with the application in solar cell devices

Cited by 11 publications

References 47 publications

Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP₂, ZnGeP₂, and CdSiP₂

Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP₂, ZnGeP₂, and CdSiP₂

Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Semiconductor for photovoltaics

Physical properties of magnesium nitridophosphate (Mg2PN3) compound

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RETRACTED: Structural, electronic, optical, elastic and thermal properties of CdGeP2 with the application in solar cell devices

Cited by 11 publications

References 47 publications

Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP2, ZnGeP2, and CdSiP2

Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP2, ZnGeP2, and CdSiP2

Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Semiconductor for photovoltaics

Physical properties of magnesium nitridophosphate (Mg2PN3) compound

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Product

Resources

About

Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP₂, ZnGeP₂, and CdSiP₂

Carrier transport and electron–lattice interactions of nonlinear optical crystals CdGeP₂, ZnGeP₂, and CdSiP₂