2021
DOI: 10.1016/j.physb.2020.412536
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Investigation of inherent properties of XScZ (X = Li, Na, K; Z = C, Si, Ge) half-Heusler compounds: Appropriate for photovoltaic and thermoelectric applications

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Cited by 42 publications
(26 citation statements)
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“…[15][16][17][18] Thanks to their extensive tunability [19][20][21][22] based on their chemical composition, crystal, or electronic structure, [23][24][25][26][27][28][29] they attract interest in the fundamental and application approach. [30][31][32][33][34] Particularly, spin polarization, [33,35] superconductivity, [36][37][38][39] shape memory, [40][41][42][43][44][45] or magnetocaloric behavior [28,40,[46][47][48][49][50] have triggered significant interest in the experimental and theoretical perspective.Based on the chemical composition and the resulting properties, Heusler alloys, also known as full-Heusler alloys with the stoichiometry X 2 YZ, can be divided into several groups according to their physical properties. [51] Co 2 YZ-based Heusler can be considered the leading group of materials showing high spin polarization (P) or even half metallicity (P ¼ 100%).…”
mentioning
confidence: 99%
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“…[15][16][17][18] Thanks to their extensive tunability [19][20][21][22] based on their chemical composition, crystal, or electronic structure, [23][24][25][26][27][28][29] they attract interest in the fundamental and application approach. [30][31][32][33][34] Particularly, spin polarization, [33,35] superconductivity, [36][37][38][39] shape memory, [40][41][42][43][44][45] or magnetocaloric behavior [28,40,[46][47][48][49][50] have triggered significant interest in the experimental and theoretical perspective.Based on the chemical composition and the resulting properties, Heusler alloys, also known as full-Heusler alloys with the stoichiometry X 2 YZ, can be divided into several groups according to their physical properties. [51] Co 2 YZ-based Heusler can be considered the leading group of materials showing high spin polarization (P) or even half metallicity (P ¼ 100%).…”
mentioning
confidence: 99%
“…[15][16][17][18] Thanks to their extensive tunability [19][20][21][22] based on their chemical composition, crystal, or electronic structure, [23][24][25][26][27][28][29] they attract interest in the fundamental and application approach. [30][31][32][33][34] Particularly, spin polarization, [33,35] superconductivity, [36][37][38][39] shape memory, [40][41][42][43][44][45] or magnetocaloric behavior [28,40,[46][47][48][49][50] have triggered significant interest in the experimental and theoretical perspective.…”
mentioning
confidence: 99%
“…The value of ε ( ω ) measures the response of the material to the incident electromagnetic radiation. The standard relations have been employed to compute all optical parameters relevant to PV applications 42‐44 …”
Section: Resultsmentioning
confidence: 99%
“…The standard relations have been employed to compute all optical parameters relevant to PV applications. [42][43][44] The dependence of the ε 1 (ω) and ε 2 (ω) on the energy of the incident photon is displayed in Figure 5A,B, respectively. From the plot, the respective values of static dielectric constant, that is, ε 1 (0) of the materials EPBr and EPCl are found to be 4.50 and 3.80, respectively.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…A wide range of materials like chalcogenides, oxide perovskites, hybrid perovskites, organic compounds, skutterudites, triple point metals, Half‐Heusler and antiperovskites [2–9] has been used as potential thermoelectric devices. Kamlesh et al [10] have investigated optoelectronic and thermoelectric parameters of XScZ (X = Li, Na and K; Z = C, Si and Ge) Half‐Heusler materials within DFT and concluded that these compounds may be efficiently employed in photovoltaic applications and manifest high figure of merit resulting it as a potentially thermoelectric candidate. Yaseen et al [11] have investigated optical and thermoelectric parameters of perovskite oxide PbTiO 3 under pressure by using Density Functional Theory (DFT) and concluded that PbTiO 3 is an indirect bandgap semiconductor up to 40 GPa and converts into direct at 80 GPa.…”
Section: Introductionmentioning
confidence: 99%