We demonstrate a plasmonic Mach-Zehnder (MZ) modulator with a flat frequency response exceeding 170 GHz. The modulator comprises two phase modulators exploiting the Pockels effect of an organic electro-optic material in plasmonic slot waveguides. We further show modulation at 100 GBd NRZ and 60 GBd PAM-4. The electrical drive signals were generated using a 100 GSa/s digital to analog converter (DAC). The high-speed and small-scale devices are relevant for next-generation optical interconnects.

Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and medium-reach interconnects in data-center networks. Small footprint, cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration perfectly meets these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. Our proof-of-concept experiments demonstrate generation and transmission of OOK signals at line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) featuring a π-voltage of only 0.9 V. The experiment represents the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, featuring the lowest drive voltage and energy consumption ever demonstrated for a semiconductor-based device at this data rate. We support our results by a theoretical analysis showing that the nonlinear transfer characteristic of the MZM can help to overcome bandwidth limitations of the modulator and the electric driver circuitry. We expect that high-speed, power-efficient SOH modulators may have transformative impact on short-reach networks, enabling compact transceivers with unprecedented efficiency, thus building the base of future interfaces with Tbit/s data rates.

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Abstract:We demonstrate a silicon-organic hybrid (SOH) Mach-Zehnder modulator (MZM) generating four-level amplitude shift keying (4ASK) signals at symbol rates of up to 64 GBd both at room temperature and at an elevated temperature of 80 °C. The measured line rate of 128 Gbit/s corresponds to the highest value demonstrated for silicon-based MZM so far. We report bit error ratios of 10 −10 (64 GBd BPSK), 10 −5 (36 GBd 4ASK), and 4 × 10 −3 (64 GBd 4ASK) at room temperature. At 80 °C, the respective bit error ratios are 10 −10 , 10 −4 , and 1.3 × 10 −2 . The hightemperature experiments were performed in regular oxygen-rich ambient atmosphere. ©2016 Optical Society of America

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