Plasmonic modulator with &gt;170 GHz bandwidth demonstrated at 100 GBd NRZ

Hoessbacher, Claudia; Josten, Arne; Baeuerle, Benedikt; Fedoryshyn, Yuriy; Hettrich, Horst; Salamin, Yannick; Heni, Wolfgang; Haffner, Christian; Kaiser, Cornelius; Schmid, Rolf; Elder, Delwin L.; Hillerkuss, D.; Möller, Michael; Dalton, Larry R.; Leuthold, Juerg

doi:10.1364/oe.25.001762

Cited by 135 publications

(104 citation statements)

References 21 publications

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“…8, where we have calibrated for the frequency-dependent loss of our RF system. In contrast to other modulator implementations, the plasmonic approach minimizes the influence of the device geometry on the frequency response [32].…”

Section: Radio-frequency Responsementioning

confidence: 99%

Plasmonic Ferroelectric Modulators

Messner

Eltes

et al. 2019

J. Lightwave Technol.

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Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-µm-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams with extinction ratios beyond 15 dB were found. The fast and robust devices are apt to an employment in industrial environments.

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Section: Radio-frequency Responsementioning

confidence: 99%

Plasmonic Ferroelectric Modulators

Messner

Eltes

et al. 2019

J. Lightwave Technol.

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“…Another approach to realize high-speed MZM relies on the concept of plasmonic-organic hybrid (POH) integration [16]. POH MZM combine ultra-small footprint [17] with unprecedented modulation bandwidths that enable data rates of up to 120 Gbit/s for PAM4 signaling [18]. These devices, however, suffer from an inherent tradeoff between insertion loss and operation voltage [19], requiring peak-to-peak voltage swings of 8 V pp that become effective when applying a 4 V pp drive signal to an unterminated MZM [18].…”

Section: Introductionmentioning

confidence: 99%

“…POH MZM combine ultra-small footprint [17] with unprecedented modulation bandwidths that enable data rates of up to 120 Gbit/s for PAM4 signaling [18]. These devices, however, suffer from an inherent tradeoff between insertion loss and operation voltage [19], requiring peak-to-peak voltage swings of 8 V pp that become effective when applying a 4 V pp drive signal to an unterminated MZM [18]. In addition, with the exception of the all-polymer device [7,8], all signaling experiments of high-speed MZM have relied on drive signals generated by benchtop-type laboratory test equipment [9,10,18,20].…”

Section: Introductionmentioning

confidence: 99%

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Zwickel¹,

Wolf²,

Kieninger³

et al. 2017

Opt. Express

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High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electrooptic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signalconditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 × 10 −5 . This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 × 10 −3 ) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform.

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“…Broadband MZ modulators with up to 40 GHz bandwidth have been demonstrated in silicon [20,21]. Modulation beyond 100 GHz has been achieved with MZ modulators based on lithium niobate, electro-optic polymer, and plasmonic waveguides [22,23,24]. MZ modulators, employing traveling-wave electrodes, overcome bandwidth limitations due to the RC time constant and provide impedance matching with the input feed line.…”

Section: Comparison To Prior Artmentioning

confidence: 99%

“…From the RF perspective, the active cavity is a capacitor C m connected in series with a resistor R m . The capacitor acts as a phase shifter that tunes the resonance frequency of the optical cavity in response to the RF signal, either by means of electrical charge accumulated on the capacitor plates [10,27] or by the electric field between them changing refractive index of an electrooptic material [24,34]. The resistor accounts for the parasitic series resistance between the capacitor plates and the terminals of the active cavities.…”

Section: Rf Configurationsmentioning

confidence: 99%

Triply resonant coupled-cavity electro-optic modulators for RF to optical signal conversion

Gevorgyan¹,

Khilo²,

Ehrlichman³

et al. 2020

Opt. Express

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We propose a triply-resonant electro-optic modulator architecture which maximizes modulation efficiency using simultaneous resonant enhancement of the RF drive signal, the optical pump, and the generated optical sideband. Optical enhancement of the optical pump and the sideband is achieved using resonant supermodes of two coupled optical resonators, and the RF enhancement is achieved with LC circuits formed by the capacitances of the optical resonators and inductors which can be implemented using CMOS technology. In the proposed configuration, the photon lifetime determines the bandwidth of the RF response but not its center frequency, which is set by the coupling strength between the two resonators and is not subject to the photon lifetime constraint inherent to conventional single-mode resonant modulators. This enables efficient operation at high RF carrier frequencies without a reduction in efficiency commonly associated with the photon lifetime limit. Two optical configurations of the modulator are proposed: a "basic" configuration with equal Q-factors in both supermodes, most suitable for narrowband RF signals, and a "generalized" configuration with independently tailored Qfactors of the two supermodes, which makes it possible to broaden the RF bandwidth without sacrificing the resonant enhancement of the optical pump and paying a penalty in modulation efficiency associated with doing so. Additionally, a significant gain in modulation efficiency is expected from RF signal enhancement by LC resonant matching. This results in a modulator which is compact, efficient, and capable of modulation at high RF carrier frequencies. The proposed modulator architecture optimally engineers the interaction of the device with each of the three signals and between them, can be applied to any modulator cavity design or modulation mechanism and promises to enable complex RF-photonic systems on chip. arXiv:1901.00071v1 [physics.optics]

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Plasmonic modulator with >170 GHz bandwidth demonstrated at 100 GBd NRZ

Cited by 135 publications

References 21 publications

Plasmonic Ferroelectric Modulators

Plasmonic Ferroelectric Modulators

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Triply resonant coupled-cavity electro-optic modulators for RF to optical signal conversion

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