100 GBd Intensity Modulation and Direct Detection with an InP-based Monolithic DFB Laser Mach-Zehnder Modulator

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

“…While this device exploits the Pockels effect in the EO polymer to provide a negligible chirp parameter of α = −0.02, it still features a large length in excess of 6 mm, dictated by the comparatively low EO coefficient of r 33 = 86 pm/V as well as by the rather large optical mode field and the associated spacing of the microstrip transmission line electrodes. The device length can be slightly reduced to approximately 4 mm by using high-speed InP-based MZM [9,10]. These devices, however, still have rather high voltage-length products of more than 5 Vmm [11], and rely on fabrication processes that are rather expensive and limited in scalability as compared to CMOS-based silicon photonic integration.…”

“…These devices, however, suffer from an inherent tradeoff between insertion loss and operation voltage [19], requiring peak-to-peak voltage swings of 8 V pp that become effective when applying a 4 V pp drive signal to an unterminated MZM [18]. In addition, with the exception of the all-polymer device [7,8], all signaling experiments of high-speed MZM have relied on drive signals generated by benchtop-type laboratory test equipment [9,10,18,20]. The associated electronic circuits feature high power consumption and are unsuited for integration into small form-factor packages.…”

Beyond 200 Gbps per Lane Intensity Modulation Direct Detection (IM/DD) Transmissions for Optical Interconnects: Challenges and Recent Developments

“…Efforts are put in all different aspects, including components, signaling formats and digital signal processing (DSP) techniques, to meet the requirements of high-speed, low-cost and small footprint [1]. Broadband electronic and optoelectronic components are being designed and demonstrated to enable over 100 GBd signal generation and modulation [2][3][4][5]. Advanced modulation formats including pulse amplitude modulation (PAM) and discrete multi-tone (DMT) of data rate over 200 Gbps are demonstrated [3][4][5][6][7].…”

“…Broadband electronic and optoelectronic components are being designed and demonstrated to enable over 100 GBd signal generation and modulation [2][3][4][5]. Advanced modulation formats including pulse amplitude modulation (PAM) and discrete multi-tone (DMT) of data rate over 200 Gbps are demonstrated [3][4][5][6][7]. Powerful and sophisticated DSP algorithms and coding methods, such as feedforward and feedback adaptive equalizers, Volterrabased filters, and/or maximum likelihood sequence estimator (MLSE) based soft decoders are developed to recover the signal from distortions, mainly caused by limited channel bandwidth and nonlinearities during the optical to electrical (O/E) and E/O conversions [6,7].…”

140 Gbaud On-Off Keying Links in C-Band for Short-Reach Optical Interconnects

“…Scaling the baudrate even higher to reduce the cost per bit in highly parallel systems is the way to go 4 . By extensive integration of opto-electronic components one achieves a reduced size and a good power efficiency 3,5 . Furthermore, it is important to reduce the complexity by employing intensity modulation and direct detection (IM/DD).…”