Optical frequency combs have the potential to revolutionize terabit communications1. Generation of Kerr combs in nonlinear microresonators2 represents a particularly promising option3 enabling line spacings of tens of GHz. However, such combs may exhibit strong phase noise4-6, which has made high-speed data transmission impossible up to now. Here we demonstrate that systematic adjustment of pump conditions for low phase noise4,7-9 enables coherent data transmission with advanced modulation formats that pose stringent requirements on the spectral purity of the comb. In a first experiment, we encode a data stream of 392 Gbit/s on a Kerr comb using quadrature phase shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM). A second experiment demonstrates feedback-stabilization of the comb and transmission of a 1.44 Tbit/s data stream over up to 300 km. The results show that Kerr combs meet the highly demanding requirements of coherent communications and thus offer an attractive solution towards chip-scale terabit/s transceivers.

Energy-efficient electro-optic modulators are at the heart of short-reach optical interconnects, and silicon photonics is considered the leading technology for realizing such devices. However, the performance of all-silicon devices is limited by intrinsic material properties. In particular, the absence of linear electro-optic effects in silicon renders the integration of energy-efficient photonic-electronic interfaces challenging. Silicon-organic hybrid (SOH) integration can overcome these limitations by combining nanophotonic silicon waveguides with organic cladding materials, thereby offering the prospect of designing optical properties by molecular engineering. In this paper, we demonstrate an SOH Mach-Zehnder modulator with unprecedented efficiency: the 1-mm-long device consumes only 0.7 fJ bit 21 to generate a 12.5 Gbit s 21 data stream with a bit-error ratio below the threshold for hard-decision forward-error correction. This power consumption represents the lowest value demonstrated for a non-resonant Mach-Zehnder modulator in any material system. It is enabled by a novel class of organic electro-optic materials that are designed for high chromophore density and enhanced molecular orientation. The device features an electro-optic coefficient of r 33 <180 pm V 21 and can be operated at data rates of up to 40 Gbit s Keywords: electro-optic materials; electro-optic modulation; nonlinear organic materials; silicon-organic hybrid INTRODUCTIONOptical interconnects are the most promising option to overcome transmission bottlenecks in data centres and high-performance computers, and energy consumption is one of the most important parameters of the associated photonic-electronic interfaces. Targeted figures are tens of femtojoule per bit for transmitters in off-chip connections, and a few femtojoule per bit for on-chip links.1 Key requirements are low drive voltages that can be provided by standard CMOS (complementary metal oxide semiconductor) circuitry without further amplification. Apart from energy efficiency, modulators need to provide fast electro-optic (EO) response along with large optical operation bandwidth to ensure high-speed transmission and flexibility in wavelength-division multiplexing systems. Moreover, dense integration is essential, calling for a small device footprint.Silicon photonics is currently the most promising technology to realize such devices, leveraging mature high-yield CMOS processing and offering the potential of photonic-electronic co-integration on large-area silicon wafers. However, second-order nonlinearities are absent in bulk silicon due to inversion symmetry of the crystal lattice.

Abstract-We report on the hybrid integration of silicon-oninsulator slot waveguides with organic electro-optic materials. We investigate and compare a polymer composite, a dendron-based material, and a binary-chromophore organic glass (BCOG). A record-high in-device electro-optic coefficient of 230 pm/V is found for the BCOG approach resulting in silicon-organic hybrid MachZehnder modulators that feature low U π L-products of down to 0.52 Vmm and support data rates of up to 40 Gbit/s.

Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonicorganic hybrid (POH) integration, which combine silicon-oninsulator (SOI) waveguides and plasmonic nanostructures with organic electro-optic cladding materials.

Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n 3 r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest materialrelated in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vµm -the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonicelectronic signal processing.

Organic materials combined with strongly guiding silicon waveguides open the route to highly efficient electro-optical devices. Modulators based on the so-called silicon-organic hybrid (SOH) platform have only recently shown frequency responses up to 100 GHz, high-speed operation beyond 112 Gbit/s with fJ/bit power consumption. In this paper, we review the SOH platform and discuss important devices such as Mach-Zehnder and IQmodulators based on the linear electro-optic effect. We further show liquid-crystal phase-shifters with a voltage-length product as low as V π L = 0.06 V·mm and sub-μW power consumption as required for slow optical switching or tuning optical filters and devices.

Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and medium-reach interconnects in data-center networks. Small footprint, cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration perfectly meets these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. Our proof-of-concept experiments demonstrate generation and transmission of OOK signals at line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) featuring a π-voltage of only 0.9 V. The experiment represents the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, featuring the lowest drive voltage and energy consumption ever demonstrated for a semiconductor-based device at this data rate. We support our results by a theoretical analysis showing that the nonlinear transfer characteristic of the MZM can help to overcome bandwidth limitations of the modulator and the electric driver circuitry. We expect that high-speed, power-efficient SOH modulators may have transformative impact on short-reach networks, enabling compact transceivers with unprecedented efficiency, thus building the base of future interfaces with Tbit/s data rates.

Three-dimensional (3D) nano-printing of freeform optical waveguides, also referred to as photonic wire bonding, allows for efficient coupling between photonic chips and can greatly simplify optical system assembly. As a key advantage, the shape and the trajectory of photonic wire bonds can be adapted to the mode-field profiles and the positions of the chips, thereby offering an attractive alternative to conventional optical assembly techniques that rely on technically complex and costly high-precision alignment. However, while the fundamental advantages of the photonic wire bonding concept have been shown in proof-of-concept experiments, it has so far been unclear whether the technique can also be leveraged for practically relevant use cases with stringent reproducibility and reliability requirements. In this paper, we demonstrate optical communication engines that rely on photonic wire bonding for connecting arrays of silicon photonic modulators to InP lasers and single-mode fibres. In a first experiment, we show an eight-channel transmitter offering an aggregate line rate of 448 Gbit/s by low-complexity intensity modulation. A second experiment is dedicated to a four-channel coherent transmitter, operating at a net data rate of 732.7 Gbit/sa record for coherent silicon photonic transmitters with co-packaged lasers. Using dedicated test chips, we further demonstrate automated mass production of photonic wire bonds with insertion losses of (0.7 ± 0.15) dB, and we show their resilience in environmental-stability tests and at high optical power. These results might form the basis for simplified assembly of advanced photonic multi-chip systems that combine the distinct advantages of different integration platforms.