Die Erschließung neuer Anwendungsfelder und der Drang zur Größenreduktion von hoch stabilen Druckmesssystemen macht die Erweiterung der Einsatztemperaturbereiche der MEMS Primärsensoren nötig. Es wurden daher piezoresistive Drucksensorsysteme für einen deutlich erweiterten Temperaturbereich entwickelt. Die Leckströme der Sensoren konnten im Bereich bis 300°C um 5 Größenordnungen gesenkt werden. Der Einfluss von allseitigen statischen Drücken konnte unter Anderem durch die Anwendung des Niedertemperatur-Silizium-Direktbondens im Mittel auf Werte kleiner 0,007%FS/100bar gesenkt werden. Die entwickelten piezoresistiven Sensoren auf Siliziumbasis zeichnen sich durch eine hohe Montagespannungsresistenz aus. Die Nullpunktabweichungen nach dem zero-und first-level Packaging betragen weniger als 0,01%FS/24h bei Temperaturen von über 200°C.
Abstract. The exploitation of new application fields and the drive to size reduction even in highly stable pressure sensing systems makes the extension of the operating temperature range of the microelectromechanical sensors (MEMS) essential. For this reason a silicon-based pressure sensor with an application temperature ranging up to 300 • C and the associated manufacturing technology was developed. With special design and manufacturing approaches mounting stress-insensitive sensors with high linearity, excellent offset stability, low hysteresis and low sensitivity changes over the entire temperature range were developed. At the moment, the sensors are tested till 300 • C at wafer level and between 135 and 210 • C as a first-level package.
Nitrogen and oxygen enriched FZ silicon p‐in‐n pad radiation detectors are investigated with respect to the radiation hardness. The leakage current and the charge carrier lifetime are measured before and after 1 MeV electron irradiation. Before irradiation the leakage current was found to increase due to enrichment by nitrogen and oxygen. After the irradiation the leakage current as well as the radiation induced defect density are found to be reduced in the nitrogen and oxygen enriched samples. Hence, increased radiation hardness for the enriched FZ silicon is observed. The defect reduction efficiency of nitrogen was found to be about two orders of magnitude higher than that of oxygen.
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