Impact of Electron Irradiation on N‐ and O‐Enriched FZ Silicon p‐in‐n Pad Radiation Detectors

Abstract

Nitrogen and oxygen enriched FZ silicon p‐in‐n pad radiation detectors are investigated with respect to the radiation hardness. The leakage current and the charge carrier lifetime are measured before and after 1 MeV electron irradiation. Before irradiation the leakage current was found to increase due to enrichment by nitrogen and oxygen. After the irradiation the leakage current as well as the radiation induced defect density are found to be reduced in the nitrogen and oxygen enriched samples. Hence, increased radiation hardness for the enriched FZ silicon is observed. The defect reduction efficiency of nitrogen was found to be about two orders of magnitude higher than that of oxygen.