Herein, a novel strategy is presented for enhancing light absorption by incorporating gold nanostars (Au NSs) into both the active layer of organic solar cells (OSCs) and the rear-contact hole transport layer of perovskite solar cells (PSCs). We demonstrate that the power conversion efficiencies of OSCs and PSCs with embedded Au NSs are improved by 6 and 14%, respectively. We find that pegylated Au NSs are greatly dispersable in a chlorobenzene solvent, which enabled complete blending of Au NSs with the active layer. The plasmonic contributions and accelerated charge transfer are believed to improve the short-circuit current density and the fill factor. This study demonstrates the roles of plasmonic nanoparticles in the improved optical absorption, where the improvement in OSCs was attributed to surface plasmon resonance (SPR) and in PSCs was attributed to both SPR and the backscattering effect. Additionally, devices including Au NSs exhibited a better charge separation/transfer, reduced charge recombination rate, and efficient charge transport. This work provides a comprehensive understanding of the roles of plasmonic Au NS particles in OSCs and PSCs, including an insightful approach for the further development of high-performance optoelectronic devices.
The penetration of moisture/O2 into the perovskite solar cells (PSCs) causes shifts of iodine distribution within the perovskite layer and facilitates diffusion of iodine towards the hole transporting layer. Interestingly, these negative effects can be prevented by a simple encapsulation process and further prolong the stability of PSCs.
Highly efficient and air-stable inverted organic solar cells were fabricated from solution-processed non-conjugated polyethylenimine ethoxylated as the polyelectrolyte, a zinc oxide bilayer as the electron transport layer, and an active layer of PTB7 and PC71BM.
A novel approach for the fabrication of ultra-smooth and highly bendable substrates consisting of metal grid-conducting polymers that are fully embedded into transparent substrates (ME-TCEs) was successfully demonstrated. The fully printed ME-TCEs exhibited ultra-smooth surfaces (surface roughness ~1.0 nm), were highly transparent (~90% transmittance at a wavelength of 550 nm), highly conductive (sheet resistance ~4 Ω ◻−1), and relatively stable under ambient air (retaining ~96% initial resistance up to 30 days). The ME-TCE substrates were used to fabricate flexible organic solar cells and organic light-emitting diodes exhibiting devices efficiencies comparable to devices fabricated on ITO/glass substrates. Additionally, the flexibility of the organic devices did not degrade their performance even after being bent to a bending radius of ~1 mm. Our findings suggest that ME-TCEs are a promising alternative to indium tin oxide and show potential for application toward large-area optoelectronic devices via fully printing processes.
Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface –OH passivation, (ii) oxygen vacancies (Vo) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.
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