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Experimental measurements consisting of ellipsometry (Q.5-3.5 eV) and normal-incidence reflectance (3.0-11. 6 eV) are used along with published data to determine the optical constants of indium from 0.5 to 15.5 eV. Although the over-all properties reflect free-electron behavior, departures from Drude theory can be understood in terms of interband transitions.

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Native defect related inhomogeneity in characteristics of GaAs fieldeffect transistors fabricated on annealed dislocationfree substrates

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