(
R e c e i v e d5 February 1940)[P lates 1-3]The w ave form o f all atm ospherics received a t n igh t from sources w ith in 2000 km . can be accurately described as a ground pulse follow ed b y a series o f sk y pulses produced b y successive reflexions betw een th e ionosphere and th e earth, th irty such reflexions being frequently recorded. T he tim e separa tion betw een th e peaks o f th ese pulses is determ ined b y th e distance travelled and th e h eight o f th e layer. T he prim ary pulse em itted b y th e source is u sually a single com plete oscillation o f period ranging from 50 to 400/tsec. A t distances greater th an 500 km . th e ground pulse and th e first sk y pulse m erge owing to th e shortness o f th e tim e interval b etw een them . The reflexion coefficient of the layer for the pulses of longer period ex ceeded 0*80.The velocity of the ground pulse where it can be tested is within 0*7 % of that of light.
An analysis having improved rigor has been made of the capacitance transient due to thermal emission from charged defect centers in a semiconductor depletion region. This analysis extends the range of applicability of capacitance–transient defect characterization techniques to nonexponential transient conditions which occur in diodes with trap densities of the same order as the net shallow dopant density or in diodes with somewhat smaller trap densities when defect centers are charged initially in only a part of the depletion region. An example of the improvement is shown for three silicon diodes heavily doped with platinum.
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