Planar test structures for characterizing impurities in silicon

Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon

“…This objective is currently being achieved by an ongoing program which uses test structures 3.8, 3.10, 3.17, and 3.26. The current status of this work is reviewed elsewhere [5] .…”

“…The main test vehicles are silicon wafers on which test pattern NBS-3 is fabricated. Preliminary results of our investigation are presented elsewhere [5] .…”

“…These measured values are intended to indicate the kind of information obtainable from this test pattern. More detailed measurements on some of the structures are presented elsewhere [5] .…”

“…These effects have a minimal effect on the dopant density value derived from the large diodet 3.10; this dopant density agrees with values obtained from the MOS capacitors. The dopant density value derived from the small diode 3.14 is too high because the peripheral capacitance correction was not taken into account [5].…”

Comprehensive test pattern and approach for characterizing SOS technology

“…Such an approach has been reported by Buehler [18] wherein two additional terminals were added to one of the arms. This provided an integration of a bridge structure with a van der Pauw structure.…”