Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layers

Phillips, W. E.

doi:10.1016/0038-1101(72)90168-2

Cited by 69 publications

(9 citation statements)

References 9 publications

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“…The conventional SPV method uses the surface junction formed in bulk materials due to the existence of surface states. More recently, the SPV method has been applied to epitaxial semiconductor layers (6). More recently, the SPV method has been applied to epitaxial semiconductor layers (6).…”

Section: Resultsmentioning

confidence: 99%

Surface Photovoltage Method Extended to Silicon Solar Cell Junction

Wang¹,

Baraona²,

Brandhorst³

1974

J. Electrochem. Soc.

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Section: Resultsmentioning

confidence: 99%

Surface Photovoltage Method Extended to Silicon Solar Cell Junction

Wang¹,

Baraona²,

Brandhorst³

1974

J. Electrochem. Soc.

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“…(2.61) also assumes a homogenous sample. Phillips [442] was the ®rst to theoretically investigate the possible effects of an epitaxial layer with a different diffusion length on the apparent (extracted) diffusion length, L app . He has shown that the Goodman plot remains linear for any epitaxial layer thickness.…”

Section: Limitations and Solutionsmentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,517

804

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“…The measurements were performed using ~ variation of the Surface ~hotovoltage Method (SPV). The theory of the method is well known [8,9,10], and some of the limits of its application have been studied [11,12] conditions which must be met are:…”

Section: Substitution Of Eqs~mentioning

confidence: 99%

“…) are easily ~et by mak~ng the sample ~ufficiently thick[11,12].Eq. (4-5) states that the lifetime for photogenerated holes is to be constant under changes of the illuminatiqn level.…”

mentioning

confidence: 99%

Amorphous silicon solar cells. Quarterly report No. 1, 1 October 1980-31 December 1980

Carlson¹,

Balberg²,

Crandall³

et al. 1981

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Ari experimental optimization of p-in cell performance in an rf capacitive system showed that the best ce1ls were obtained when the rf power was relatively low (60 mW/cm 2) and the substrate temperature was "-230°C.• Other studies have shown that good p-in cells can.be fabricated on ITO-coated glass without the use of a cermet contacting layer. Interfaces are. being studied by measur,ing work functions of vari~us surfaces. A correlation has .been found between poor performance of p-in cells and '. relatively low work functions for the n-layer and the top ITO. contact. While light-induced degradation has"been observed in some p-in cells, the extrapolation of results for preserit•cells indicates that the conversion efficiency will' still be in excess 9f 4.0%.after 10 years o£ .normal.operation. Some cells have been fabricated that exhibit an improvement in performance under prolonged light exposure. vi

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Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layers

Cited by 69 publications

References 9 publications

Surface Photovoltage Method Extended to Silicon Solar Cell Junction

Surface Photovoltage Method Extended to Silicon Solar Cell Junction

Surface photovoltage phenomena: theory, experiment, and applications

Amorphous silicon solar cells. Quarterly report No. 1, 1 October 1980-31 December 1980

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