GaAs field-effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations

Dobrilla, P.; Blakemore, J. S.; McCamant, A.J.; Gleason, K.R.; Koyama, R. Y.

doi:10.1063/1.96085

Cited by 50 publications

(6 citation statements)

References 12 publications

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“…As shown in [9,16,17], many of these parametric variations do not occur in a random manner across a wafer but in a radial and/or axial pattern. Also, due to the physical correlations existing between FET characteristics these parameters should not be treated as uncorrelated, mutually independent random variables [ 18,191.…”

Section: Ic Process/device Modelingmentioning

confidence: 99%

Neural networks for the design and fabrication of integrated circuits for aerospace applications

Creech¹

1997

1997 IEEE Aerospace Conference

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A great effort has been underway in recent years to develop microwave and millimeter wave monolithic integrated circuit (MIMIC) technology for phased array radar systems for airborne and space based applications. Solid-state MIMICS have made a dramatic impact on capability, reliability, and cost of these sensor systems. However, the computer-aided engineering (CAE) tools necessary for the modeling and simulation of such complex systems has not kept pace. This paper presents a methodology for the utilization of neurocomputing technology to achieve enhanced yield and efficient yield prediction in integrated circuit (IC) manufacturing. Specifically, artificial neural networks (ANNs) are employed to model complex relationships between material and device characteristics at critical stages of the semiconductor fabrication process. Additionally, a methodology for the development of ANN models of MIMIC passive elements based on the elements physical parameters is described. Results are presented which illustrate that a ANN can predict the equivalent circuit parameters (ECPs) and/or the scattering-parameters of these passive elements to nearly the same degree of accuracy as that afforded by electromagnetic (EM) simulation.

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Section: Ic Process/device Modelingmentioning

confidence: 99%

Neural networks for the design and fabrication of integrated circuits for aerospace applications

Creech¹

1997

1997 IEEE Aerospace Conference

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“…While many reports concerning the origin of Vth scattering on the substrate have appeared else-where, the notable results may be summarized as follows ; (i) dislocations [2,3], (ii) residual C concentration [4], (iii) local EL2 concentration [5], and (iv) local lattice strain caused by the deviation from stoichiometry [6]. A contrary result has also been reported, in that no dislocation effect on Vth scattering was demonstrated [7].…”

mentioning

confidence: 97%

Study on fundamental defects and their effect on GaAs device properties

Miyazawa

Watanabe

Ōsaka

et al. 1988

Rev. Phys. Appl. (Paris)

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2014 L'état de notre compréhension des relations entre les paramètres du matériau et de la tension seuil du transistor GaAs à effet de champ est présenté brièvement sous l'angle des réactions entre défauts ponctuels. L'accent est d'abord mis sur les dislocations dans GaAs semi-isolant (LEC) et sur leur rapport avec la dispersion des tensions seuil. On discute ensuite des défauts ponctuels associés à ces dislocations, auxquels on attribue la dispersion des tensions seuil. On montre qu'un recuit haute température produit une augmentation de la concentration d'EL2 et une homogénéisation des caractéristiques des dispositifs, même en présence de dislocations. Un modèle possible de défauts au voisinage des dislocations, basé sur des interstitiels d'arsenic, et une évolution de ces défauts, en cours de croissance et de cycles de recuit est proposé. Abstract. 2014 Our understanding of the causal relationship between material parameters and GaAs FET threshold voltage is briefly presented from the viewpoint of point defect reactions. Primarily, dislocations in LEC-grown GaAs are focused on in light of threshold voltage scattering, and point defects associated with dislocations attributable to threshold voltage scattering are discussed. High temperature post-growth annealing results in the increase in [EL2], which provides homogenization of device characteristics, even when the crystal contains dislocations. A possible defect model around dislocations and evolution of such defects in crystal growth and annealing cycles are proposed, where As-interstitial is mainly considered.

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“…It has been possible in some cases to correlate such maps of material properties with maps of device properties from the same ͑or an adjacent͒ wafer. 1,7 While the ͓EL2͔ and stress measurements are nondestructive, the D measurements require a KOH etch to form etch pits at the surface. In contrast to the EL2 centers, which reduce the transmission by absorption, the etch pits reduce the transmission by scattering; however, both effects are easily quantifiable.…”

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confidence: 99%

Nondestructive mapping of carrier concentration and dislocation density in n+-type GaAs

Walters

Mier

Sizelove

1994

Applied Physics Letters

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GaAs field-effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations

Abstract: Native defect related inhomogeneity in characteristics of GaAs fieldeffect transistors fabricated on annealed dislocationfree substrates

Cited by 50 publications

References 12 publications

Neural networks for the design and fabrication of integrated circuits for aerospace applications

Neural networks for the design and fabrication of integrated circuits for aerospace applications

Study on fundamental defects and their effect on GaAs device properties

Nondestructive mapping of carrier concentration and dislocation density in n+-type GaAs

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