The energy levels and the defect signature of sulfur-implanted silicon by thermally stimulated measurements

Koyama, R. Y.; Phillips, W. E.; Myers, David R.; Liu, Y.M.; Dietrich, H. B.

doi:10.1016/0038-1101(78)90293-9

Cited by 15 publications

(5 citation statements)

References 8 publications

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“…Tin was studied in particular as a dopant to improve the radiation resistance of c-Si devices, but was also found to form midgap states in Si [49,50]. Finally, sulfur was studied notably in "black silicon" processing, where it was found that its incorporation creates deep bandgap states, which increase the infrared light absorption in Si, making it appear more "black" [46,51,52].…”

Section: The Need For a Diffusion Barrier Layermentioning

confidence: 99%

Monolithic thin-film chalcogenide–silicon tandem solar cells enabled by a diffusion barrier

Hajijafarassar

Martinho

Stulen

et al. 2020

Solar Energy Materials and Solar Cells

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Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earthabundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu 2 ZnSnS 4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (> 500 • C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (< 25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ms, i.e., a promising implied open-circuit voltage (i-V oc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a V oc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells.

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Section: The Need For a Diffusion Barrier Layermentioning

confidence: 99%

Monolithic thin-film chalcogenide–silicon tandem solar cells enabled by a diffusion barrier

Hajijafarassar

Martinho

Stulen

et al. 2020

Solar Energy Materials and Solar Cells

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show abstract

“…It is likely that, in bulk doping from a limited volume (as in the case under consideration), crystal defects can hinder uniform saturation of the crystal bulk with the impurity. The same difficulty may be encountered when the other method is used, in which diffusion is performed from a limited volume, with ion implantation of silicon with sulfur and the subsequent high-temperature up-diffusion of the impurity [13]. Therefore, we chose as the main technological procedure for fabrication of detectors, the method of silicon doping with sulfur by high-temperature diffusion of the element from the vapor phase in sealed ampoules.…”

Section: Properties Of the Samples Obtainedmentioning

confidence: 98%

“…This method includes two stages, in the first of which sulfur is introduced into the surface layer of a crystal. This can be done at room temperature by the ion implantation technique [13], or in the course of the diffusion process at comparatively low temperatures [14]. The next stage of the doping process occurs when sulfur buried in the surface layer diffuses into the bulk of the crystal, which is usually done in an open tube of a high-temperature furnace.…”

Section: Introductionmentioning

confidence: 99%

Planar sulfur-doped silicon detectors for high-speed infrared thermography

Astrov

Portsel

Lodygin

et al. 2009

Infrared Physics & Technology

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“…Sulfur-doped silicon (Si:S) has been extensively studied (see, e.g., [1][2][3][4][5]). It is known that the introduction of sulfur into silicon yields a number of donor centers, including simple substitution centers (S 1 ), as well as centers composed of a pair of sulfur atoms that occupy two neighboring substitution positions in the silicon lattice (S 2 ).…”

Section: Introductionmentioning

confidence: 99%

“…Sulfur has been introduced into silicon by various methods: diffusion from the gas phase in sealed ampoules [1,2,5], including that with a radioactive isotope of sulfur, 35 S [8], and implantation followed by a high-temperature treatment of samples [3,4]. Another double-stage technique includes preliminary doping of the surface of a silicon wafer with sulfur from a surface layer of a diffusant-containing organic substance at comparatively low temperatures.…”

Section: Introductionmentioning

confidence: 99%