We conducted this Institutional Review Board-approved retrospective study to compare Aquacel Ag Hydrofiber dressing (Aquacel Ag) to a standard dressing for the treatment of partial thickness burns in children. We used the St. Christopher's Hospital burn center registry to identify 20 pediatric patients who had sustained partial thickness burns over a 10-month period. Ten of these patients had been treated with Aquacel Ag Hydrofiber dressing and 10 were treated with conventional Xeroflo gauze with Bacitracin Zinc ointment, the institutional standard of care for nonoperative partial-thickness burn wounds. Inclusion criteria included anyone with partial-thickness burns below the age of 18 years and in excellent baseline health. Exclusion criteria included inhalation injury, presence of full-thickness burns necessitating surgical debridement, cellulitic, or infected wounds, and percentage total body surface area involvement greater than 40%. Outcomes measured for the Aquacel Ag versus the Xeroflo gauze with Bacitracin Zinc ointment group included hospital length of stay (2.4 vs. 9.6 days), total number of in-house dressing changes (2.7 vs. 17.1), pain on a 10-point scale associated with dressing changes (6.4 vs. 8.2), total number of intravenous narcotic administrations (2.3 vs. 14.4), nursing time adjusted for percentage total body surface area (1.9 vs. 3.5 min), time to wound reepithelialization (10.3 vs. 16.3 days), and patient primary caregiver satisfaction score using a 4-point scale--with four delineating maximum satisfaction (3.8 vs. 1.8). Aquacel Ag proved to be a safe and effective means of treating partial thickness burns with a significant reduction in nursing time and patient pain involved with dressing changes.
Articles you may be interested inMolecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure J. Appl. Phys. 114, 013704 (2013); 10.1063/1.4811443 Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications J. Appl. Phys. 109, 033706 (2011); 10.1063/1.3544041Suppression of surface segregation of silicon dopants during molecular beam epitaxy of ( 411 ) A In 0.75 Ga 0.25 As ∕ In 0.52 Al 0.48 As pseudomorphic high electron mobility transistor structures Study of highly selective wet gate recess process for Al 0.25 Ga 0.75 As/GaAs based pseudomorphic high electron mobility transistors Comparison of As-and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications High electron mobility transistors ͑HEMTs͒ with InAs channels and antimonide barriers were grown by molecular beam epitaxy. Both Si and Te were successfully employed as n-type dopants. Sheet resistances of 90-150 ⍀/ᮀ were routinely achieved on a variety of heterostructures with nonuniformities as low as 1.5% across a 75 mm wafer. X-ray diffraction measurements show that the InAs channels are in tension, coherently strained to the Al͑Ga͒Sb buffer layers. Atomic force microscopy measurements demonstrate that the surfaces are relatively smooth, with rms roughness of 8 -26 Å over a 5ϫ5 m 2 area. These results demonstrate that the growth of InAs HEMTs has progressed to the point that the fabrication of circuits should be feasible.
A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25 dBm with phase noise of 92 dBc/Hz at 100-KHz offset, and 120 dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications. Index Terms-Gallium nitride, monolithic microwave integrated circuit (MMIC) oscillator, phase noise.
This letter presents an ultra-wideband low noise amplifier (LNA) using gallium-nitride (GaN) high-electron mobility transistors (HEMT) technology. A 3 dB bandwidth of 1-25 GHz with 13 dB peak power gain is achieved using a modified resistive-feedback topology. To obtain such a wide bandwidth, several bandwidth enhancement techniques are utilized. An inductor connected to the source of the input transistor ensures good input matching ( 11 9 dB) across the entire bandwidth. The shunt feedback loop and the inductive source degeneration minimize all the required inductor values. This GaN HEMT LNA is believed to have the widest bandwidth among all GaN HEMT monolithic microwave integrated circuit (MMIC) LNAs reported to date. With 3.3 dB minimum noise figure (F), 33.5 dBm maximum output-referred third-order intercept point (OIP3), 20 dBm maximum output-referred 1 dB compression point (Output P1 dB), this MMIC amplifier is comparable in performance to distributed amplifiers (DAs) but with significantly lower power consumption and smaller area. Index Terms-GaN, low noise amplifier (LNA), resistive feedback, wideband.
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