A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz

Kobayashi, K.W.; Chen, Yao Chung; Smorchkova, I.; Tsai, R.; Wójtowicz, M.; Oki, A.K.

doi:10.1109/mwsym.2007.379977

Cited by 42 publications

(17 citation statements)

References 5 publications

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“…This ranged from packaged HEMTs matched on PC board [12]; HEMT dies directly wire bonded on to PC board containing the matching circuit [5]; GaN on Sapphire devices flip-chip mounted to an AlN carrier containing the passives [15]; to full scale MMIC PAs [7].…”

Section: Methodsmentioning

confidence: 99%

“…A second popular topology is the resistive feedback amplifier that can achieve relatively broadband performance and rugged stability due to their negative feedback [6,7]. In a MMIC or flip-chip hybrid configuration, resistive feedback has been used in conjunction with cascode devices [8], Darlington amplifiers [9], and ft-multipliers [10] to obtain higher gain or even wider bandwidth.…”

Section: Broadband Pa Topologymentioning

confidence: 99%

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RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Krishnamurthy¹,

Wang²,

Landberg³

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We have demonstrated a RLC matched GaN HEMT power amplifier with 12dB gain, 0.05-2.0 GHz bandwidth, 8W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic SO8 package and contains a GaN on SiC device operating at 28V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48V operation and 15W CW power over the same band, obtains over 20W under pulsed condition with 10% duty cycle and 100μs pulse width. CW measurements are pending after assembly in an alternate high power package. These amplifiers are suitable for use in wideband digital cellular infrastructure, handheld radios, and jamming applications.

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Section: Methodsmentioning

confidence: 99%

Section: Broadband Pa Topologymentioning

confidence: 99%

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Krishnamurthy¹,

Wang²,

Landberg³

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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show abstract

“…These properties make GaN HEMT's ideally suited to broadband, high efficiency PA applications. Several approaches have been taken to implement broadband PAs using GaN HEMTs ranging from unmatched transistors with PCB level matching [7] to full MMIC PA's [8]. As an alternative, a multi-chip module approach is utilized consisting of GaN-on-SiC die packaged with GaAs integrated passive circuits (IPCs) [9].…”

Section: A Power Ic's Multi-chip Module Amplifiersmentioning

confidence: 99%

Optimization of Gallium nitride high power technology for commercial and military applications

Shealy¹,

Lefevre²,

Anderson³

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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Next generation commercial and military systems require high power amplifiers (HPAs) with superior performance such as higher efficiency, improved thermal performance, wider bandwidth and higher output power. Using an optimized 0.5um, 48V GaN-on-SiC process, a family of GaN power amplifiers are developed for applications in the frequency range of 30MHz to 4GHz and output power ranging from 8W to 500W.Such devices clearly demonstrate superior power-bandwidth product of GaN for military applications such as radar, military communications and electronic warfare. For commercial applications, a family of linear amplifiers, applicable to 3GPP, LTE and WiMax cellular base stations, offer high efficiency operation. Finally, an optimized GaN process is utilized to develop new cable TV power doubler modules offering 6dB improvement in CIN performance over incumbent GaAs based amplifiers.

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“…As a result, GaN-based device is very promise for survivable and robust low noise amplifier (LNA), and thus constitute a suitable solution for integrated receivers without any limiter stage [5]. The realization of LNA-PA with 2W output power at 2-8GHz [6] shows its great potential for the future multiband defense and military communication systems application.…”

Section: Introductionmentioning

confidence: 99%

Characterization of high-frequency noise performance of GaN double heterojunction HEMT

et al. 2010

2010 International Conference on Microwave and Millimeter Wave Technology

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A systematic GaN single heterojucntion HEMT (SH-HEMT) physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The high frequency noise performance of AlGaN/GaN/AlGaN double heterojuction HEMT (DH-HEMT) is studied based on the established SH-HEMT model. The results show that, because of the enhancement of carrier confinement in DH-HEMT, better high frequency noise performance can be achieved.

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A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz

Cited by 42 publications

References 5 publications

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Optimization of Gallium nitride high power technology for commercial and military applications

Characterization of high-frequency noise performance of GaN double heterojunction HEMT

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