A simple methodfor the fabrication of anodic aluminum oxide films (AOFs) with perfectly ordered structures (see Figure) is presented by these authors. A common optical grating is used to prepattern the aluminum substrate, which is subsequently anodized under mild conditions to yield an AOF with a photonic bandgap in the visible region.

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We investigate the blue photoluminescence of Si+-implanted SiO2 films under picosecond UV excitation. The emission intensity exhibits a nonlinear increase with increasing excitation intensities, accompanied by pulse shortening. The photoluminescence decays nonmonoexponentially in time. However, the nonlinearities are not associated with significant spectral narrowing. To explain the results, we propose and numerically investigate a kinetic model based on competition between radiative (both spontaneous and stimulated) and nonradiative recombination in isolated luminescence centers in the SiO2 matrix. Good agreement between theoretical and experimental data seems to confirm the existence of stimulated emission in the films, however, under extremely high excitation densities only (approximately 100 MW/cm2).

Recently, a novel method for evaluation of recombination coefficients corresponding to Shockley-Read-Hall, radiative, and Auger recombination channels has been proposed, which combines measurements of the light emitting diode (LED) external quantum efficiency under continuous wave operation with the determination of non-equilibrium carrier differential life time (DLT) by small-signal time-resolved photoluminescence [Nippert et al., Jpn. J. Appl. Phys., Part 1 55, 05FJ01 (2016)]. In this work, we suggest an alternative technique, small-signal frequency-domain lifetime measurements, which is implemented more easily and capable of operating in a wider range of LED operating currents. The DLTs measured by both techniques are shown to agree well with each other, but saturate at low currents, contrary to the trend predicted by the well-known ABC-model. We discuss possible reasons for this deviation, as well as advantages and limitations of the measurement techniques.

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The optical properties of two-dimensional photonic crystals (PhCs) in anodic aluminum oxide (AAO) films obtained using a simple and low-cost pre-patterning procedure are described. The prepatterning of the initial Al film surface was carried out by imprinting with an optical diffraction grating; the anodization of the prepatterned sample led to the formation of a good quality, large-area PhC with a triangular lattice of air holes (lattice period a ¼ 0:48 mm, hole radius r ¼ 0:2 mm) in an AAO film. The optical transmission spectra of the sample were measured at visible wavelengths in the range of 0.4-1.0 mm for various incidence angles and linear polarizations of the probing light. The detailed analysis of the transmission data indicates a photonic band gap in the 0.9-1.0 mm wavelength range for light waves linearly polarized in the direction perpendicular to the axes of PhC pores.

We show experimentally that a layer of silicon nanocrystals, prepared by the Si-ion implantation (with the energy of 400 keV) into a synthetic silica slab and exhibiting room-temperature red photoluminescence, can serve simultaneously as a single-mode planar optical waveguide. The waveguide is shown to self-select guided transverse electric and transverse magnetic modes from the broad photoluminescence emission of the nanocrystals resulting in a substantially narrower emission spectrum for these modes. We further report on an investigation of optical gain in a sample implanted to a dose of 4×1017 cm−2. Despite the occurrence of strong waveguiding, results of the variable stripe length method turned out not to be able to give unambiguous evidence for optical gain.

Nonequilibrium carrier dynamics in copper selenide (Cu2−δSe δ=0.15, Cu3Se2) nanowires (diameter ≈18 nm, height ≈2 μm) and nanocrystallites (diameter≈18 nm) in femto- and picosecond time domains by the means of a transient dynamic grating technique were investigated. Bulk and quantum confinement approaches were used to fit the experimental results using nonequilibrium carrier fast relaxation, recombination, and trapping mechanisms. A nonradiative Auger recombination was concluded to be the main mechanism of nonequilibrium carrier recombination. The Auger coefficient for copper selenide was estimated of the order of 10−30−10−29 cm6 s−1. Hole trapping at shallow impurity centers in nanowires was interpreted. From calculating the experimental results the trapping parameters and high concentration of centers >1020 cm−3 were evaluated. Finally, direct measurement of carrier lifetime in copper selenide nanostructures showed values of the order of ≈10−10 s. Samples were characterized by the means of transmission electron microscopy, scanning electron microscopy, x-ray diffraction, and optical spectroscopy.