The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n-type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.

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Effect of high-energy electron beam irradiation on the properties of ZnO thin films prepared by magnetron sputtering J. Appl. Phys. 105, 123509 (2009) ZnO nanowire ͑NW͒ growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

Nonequilibrium carrier dynamics in copper selenide (Cu2−δSe δ=0.15, Cu3Se2) nanowires (diameter ≈18 nm, height ≈2 μm) and nanocrystallites (diameter≈18 nm) in femto- and picosecond time domains by the means of a transient dynamic grating technique were investigated. Bulk and quantum confinement approaches were used to fit the experimental results using nonequilibrium carrier fast relaxation, recombination, and trapping mechanisms. A nonradiative Auger recombination was concluded to be the main mechanism of nonequilibrium carrier recombination. The Auger coefficient for copper selenide was estimated of the order of 10−30−10−29 cm6 s−1. Hole trapping at shallow impurity centers in nanowires was interpreted. From calculating the experimental results the trapping parameters and high concentration of centers >1020 cm−3 were evaluated. Finally, direct measurement of carrier lifetime in copper selenide nanostructures showed values of the order of ≈10−10 s. Samples were characterized by the means of transmission electron microscopy, scanning electron microscopy, x-ray diffraction, and optical spectroscopy.

Absorption saturation at 1.064 μm wavelength in Cu2−xSe material nanostructured by means of an original method—formation and hosting in an array of electrochemically grown alumina voids—was investigated. Columnlike channels provide growth of copper selenide in a shape of nanowire with a fixed diameter. Experimental results obtained from measuring nanowires of various diameters (∅10, 15, 20, and 70 nm) revealed that the ∅20 nm case is most efficient for absorption saturation, manifesting highest optical modulation depth and lowest interlevel transition rate evaluated. A model to analyze the conditions for absorption saturation and absorption recovery dynamics was developed. Depending on pump intensity the nonmonotonous increase in recovery time for the highest applied values was interpreted as filling up of states at an intermediate energy level. From modeling, important material science parameters, such as concentration of resonant and trapping/recombination states, interlevel transition rate, capture time, characteristic for copper selenide, have been evaluated and compared for different samples. Finally, the consequence of the model to a working copper selenide energy level scheme was considered.