A study of the relaxation luminance peak and the electro-optical aging effects in atomic layer epitaxy (ALE) normally doped ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices is presented. The relaxation luminance occurs when the applied voltage goes to zero. The changes in the luminance versus time L(t), current versus time I(t), and characteristics of luminance versus voltage, as a function of aging are discussed in terms of a model which includes bulk traps, space charge, and shallow trap levels. This relaxation luminance peak observed in ALE devices provides a means of gaining insight into ACTFEL devices.
Active Matrix Electroluminescent devices are fabricated using circuitry built on the thin-film single crystal silicon on insulator wafers. A 128 x 128 matrix with 24.tm pixel pitch (1000 lines/inch) is fabricated with higher than 80% fill factor showing initial brightness of above 500th and high contrast ratios (>100:1). These devices demonstrated the successful combination of active circuitry fabricated using conventional IC processing with standard EL processing. This AMEL approach provides the potential for head-mounted displays with a very small profile and high efficiency.
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