Electrical characterization and modeling of alternating-current thin-film electroluminescent devices

Davidson, James Duncan; Wager, John F.; Khormaei, R.; King, Christopher N.; Williams, R. H.

doi:10.1109/16.129092

Cited by 23 publications

(9 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…V to2 corresponds most closely to the turn-on voltage found in a Q-V measurement; thus, V to2 corresponds to an average turn-on voltage. Note that these three voltages are referred to as turn-on voltages instead of threshold voltages (13,21).…”

Section: Capacitance-voltage Analysismentioning

confidence: 99%

Electrical Characterization of Thin-Film Electroluminescent Devices

Wager

Keir

1997

Annu. Rev. Mater. Sci.

View full text Add to dashboard Cite

Electrical characterization methods for the analysis of alternating current thinfilm electroluminescent (ACTFEL) devices are reviewed. Particular emphasis is devoted to electrical characterization techniques because ACTFEL devices are electro-optic display devices whose performance is to a large extent determined by their electrical properties. A systematic procedure for ACTFEL electrical assessment is described. The utility of transient charge, voltage, current, and phosphor field analysis is explained. Steady-state electrical characterization methods discussed in this review include charge-voltage (Q-V), capacitance-voltage (C-V), internal charge-phosphor field (Q-F p), and maximum charge-maximum applied voltage (Q max-V max) analysis. These electrical characterization methods are illustrated by reviewing relevant results obtained from the analysis of evaporated ZnS:Mn and atomic layer epitaxy (ALE) SrS:Ce ACTFEL devices.

show abstract

Section: Capacitance-voltage Analysismentioning

confidence: 99%

Electrical Characterization of Thin-Film Electroluminescent Devices

Wager

Keir

1997

Annu. Rev. Mater. Sci.

View full text Add to dashboard Cite

show abstract

“…R e is the lumped resistance of the Al electrode, while the resistance and capacitance of the phosphor and insulator layers, 1 and 2, are denoted by their respective subscripts, p and i. R d is denoted as the "hot electron" resistance associated with hot-electron emission from interface states. 11 The two back-to-back zener diodes, D 1 and D 2 , account for the conduction within the phosphor region, and the driving voltage is indicated by V exc .…”

Section: Letfel Equivalent Circuitmentioning

confidence: 99%

“…Verification of the developed LETFEL SPICE model was achieved via the electrical characterisation of the LETFEL test devices using the capacitance-voltage (C-V) and current-voltage (I-V) techniques. 11,12 The current-sense resistor method was employed, the circuit configuration shown in Figure 4. The function generator feeds the amplifier that drives the LETFEL test device via a series resistor, R s , and a sense resistor, R c .…”

Section: Figure 3 Letfel Equivalent Circuitmentioning

confidence: 99%

P‐32: Feasibility of Laterally‐Emitting Thin‐Film Electroluminescent (LETFEL) Devices for an Opto‐Electronic Integrated Circuit (OEIC)

Theng

Cranton

Thomas

et al. 2000

Symp Digest of Tech Papers

View full text Add to dashboard Cite

show abstract

“…Note that the evaporated ZnS:Mn ACTFEL devices investigated in this study do not exhibit a large amount of q ext (t) offset. This is not surprising since the electrical characteristics of these devices are known to be symmetric 8,9 and there is no evidence for dynamic space charge generation in these devices. 2 Figure 1 shows a comparison of Q max -V max and Q max e -V max curves obtained at room temperature ͑300 K͒ and at an applied frequency of 1000 Hz.…”

Section: B Maximum Charge-maximum Applied Voltage Analysismentioning

confidence: 99%

Transferred charge analysis of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Myers

Wager

1997

Journal of Applied Physics

View full text Add to dashboard Cite

Evaporated ZnS:Mn alternating-current thin-film electroluminescent ͑ACTFEL͒ devices are assessed via frequency-and temperature-dependent transferred charge analysis. The frequency-dependent trends involve the threshold voltage and the slope of the transferred charge immediately above threshold, both of which increase with increasing frequency. At ϳ15-20 V above threshold, the slope of the transferred charge curve is relatively independent of frequency and is approximately equal to the physical insulator capacitance. The temperature-dependent trends indicate that the phosphor capacitance increases and the slope of the transferred charge immediately above threshold decreases with increasing temperature. These frequency-and temperaturedependent trends are interpreted as arising from metastable hole trapping in which holes created in the phosphor by band-to-band impact ionization remain trapped in metastable traps at the cathode interface instead of being annihilated by electrons trapped at interface states.

show abstract

Electrical characterization and modeling of alternating-current thin-film electroluminescent devices

Cited by 23 publications

References 8 publications

Electrical Characterization of Thin-Film Electroluminescent Devices

Electrical Characterization of Thin-Film Electroluminescent Devices

P‐32: Feasibility of Laterally‐Emitting Thin‐Film Electroluminescent (LETFEL) Devices for an Opto‐Electronic Integrated Circuit (OEIC)

Transferred charge analysis of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Contact Info

Product

Resources

About