The paper presents a study of the performance of some selected UV detectors. Unlike many similar works, the obtained data refer to commercial photodiodes (not only to detector materials). The main task of the research was to determine the influence of the operating temperature and annealing on the detector spectral responsiveness. A comparison of the results obtained for the photodiodes made of GaN and SiC was also performed. Although both kinds of detectors can work at high temperatures for a long time, some modification of their properties was observed. However, for GaN and SiC photodiodes, this modification has a substantially different nature. It is very important for some applications, e.g. fire alarms and a military equipment.
Digital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements ofESR spectra on the same wafers.
Ultraviolet (UV) semiconductor detectors are mainly made of materials with wide energy gap, i.e., of AlGaN, GaP, SiC, and diamond. The article describes methodology of measurements of characteristics of low-frequency noises of UV detectors and presents the developed measuring system. Basing on analysis of noise characteristics of detectors, an optimal working point of detector can be determined. The results of measurements of noise characteristics of UV detectors made of AlGaN are shown. The measurements have been carried out in wide range of temperatures for several values of a detector supply voltage.
The technique of low frequency noise vs temperature is a powerful tool for study of deep level impurities in semiconductors materials. The physical parameters of the deep level defects are possible to identify from noise data. Measurement system to measure low noise spectra in frequency range from 0.01 Hz to 102 kHz at temperature from 77 K to 350 K has described.
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