Digital analysis of photo-induced current transients in semi-insulating GaAs and InP

Kamiński, P.; Pawłowski, M.; Ćwirko, R.; Palczewska, M.; Kozłowski, Roman

doi:10.1117/12.238140

Cited by 1 publication

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“…A defect level with an activation energy of approximately 0.6 eV in Fe-doped InP, as can be found in the case of the positive MD-PICTS peak, was reported by several other groups from conventional PICTS and other electrical measurements. This level is ascribed to the thermal emission of electrons from the ionized Fe 2+ -level into the conduction band [2][3][4][5][6][7]. This is why the occurrence of the positive MD-PICTS peak in our case is believed to be due to the same transition.…”

Section: Discussionmentioning

confidence: 64%

“…In general, conventional PICTS spectra of Fe-doped InP reported in the literature show one dominant positive peak with a corresponding activation energy of 0.6 to 0.68eV. It is ascribed to the electron emission from the ionized Fe 2+ -charge state into the conduction band [2][3][4][5][6][7]. Positive PICTS signals with an activation energy of 0.68 to 0.78eV are also assigned to the iron defect level.…”

Section: Introductionmentioning

confidence: 99%

“…Kaminski et al [5,6] reported the occurrence of negative current transients during PICTS measurements of SI-InP samples and epitaxial layers. This means, the detected photo current falls below the equilibrium value after the photo excitation is turned off.…”

Section: Introductionmentioning

confidence: 99%

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Contact Free Defect Investigation in as grown Fe-doped SI-InP

et al. 2005

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The methods of microwave-detected photo-induced current transient spectroscopy (MD-PICTS) and microwave-detected photoconductivity (MDP), which proved themselves as very successful for defect investigations in GaAs wafers, were applied to Fe-doped SI-InP samples. It was possible to observe characteristic defect levels. One important defect center showed a similar behavior as the well known EL2 defect in GaAs. This defect exhibits positive and negative PICTS signals depending on the Fe concentration. The associated activation energies show that these signals can be interpreted as an interaction of the Fe2+/3+ level in InP with both, the valence and the conduction band.Beside this major defect we discovered a wide range of shallow defects which may be important for material properties.This result and successful microwave detected photoconductivity mappings of InP wafers show that the new non-destructive investigation methods provide valuable information on defect distribution and characteristics.

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