Articles you may be interested inEffects of hydrogen and rf power on the structural and electrical properties of rf sputtered hydrogenated amorphous silicon carbide films Effect of substrate temperature on deposition rate of rf plasmadeposited hydrogenated amorphous silicon thin films J. Appl. Phys. 69, 3757 (1991); 10.1063/1.348470Powderfree plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge
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