Diffusion length measurements of thin amorphous silicon layers

Heuvel, J.C. van den; Oort, R.C. Van; Geerts, M.J.

doi:10.1016/0038-1098(89)90269-x

Cited by 12 publications

(13 citation statements)

References 3 publications

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“…First, photon absorption may be incomplete due to the ®nite sample thickness [546]. In addition, re¯ection from the back (and possibly multiple re¯ections as well) must be taken into account [483]. Thus, the generation term in Eq.…”

Section: Limitations and Solutionsmentioning

confidence: 99%

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Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,518

804

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Section: Limitations and Solutionsmentioning

confidence: 99%

“…Moreover, re¯ections result in (usually highly) nonlinear Goodman plots. Van den Heuvel et al [483] have shown that under such conditions, L may still be extracted, but the simple, intercept-based, extraction must be replaced with a more sophisticated mathematical analysis.…”

Section: Limitations and Solutionsmentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,518

804

View full text Add to dashboard Cite

“…When the semiconductor layer is sufficiently thin or when the front surface is illuminated, the lateral diffusion is determined by the diffusion length of minority carriers in the semiconductor layer. The small diffusion length of a-Si (120nm) [24] encouraged us to investigate the lateral resolution of photocurrent measurements using this material.…”

Section: Spatial Resolutionmentioning

confidence: 99%

Application of Thin-Film Amorphous Silicon to Chemical Imaging

et al. 2006

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A thin-film amorphous silicon (a-Si) deposited on a glass substrate was employed as a semiconductor material for the chemical imaging sensor, which can visualize the distribution of ion concentration in a solution. The sensing properties and the spatial resolution of the a-Si sensors were investigated. Nearly-Nernstian pH sensitivities and submicron resolution were demonstrated, which suggests the superior performance of the chemical imaging sensor based on thin-film a-Si.

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“…(57,58) Moritz et al employed amorphous Si and demonstrated a high spatial resolution in the submicron range. (58) Compared with the sensors based on single-crystalline Si, however, the stability of an insulating layer on these semiconductor materials is still a problem.…”

Section: Correction Of Artifact Signalmentioning

confidence: 99%

Development and Bio-imaging Applications of a Chemical Imaging Sensor

2016

Sensors and Materials

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A chemical imaging sensor is a field-effect-based semiconductor sensor, capable of label-free imaging of ion distributions in a solution. The sensor has attracted much interest owing to its simple structure and diverse fields of application of bioimaging. In this article, the principle and development of the chemical imaging sensor are summarized, compared with those of other labelfree imaging sensors. Bio-imaging applications of the chemical imaging sensor to ion diffusion, enzymatic reaction, and metabolic activities of microorganisms are also reviewed.

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Diffusion length measurements of thin amorphous silicon layers

Cited by 12 publications

References 3 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

Application of Thin-Film Amorphous Silicon to Chemical Imaging

Development and Bio-imaging Applications of a Chemical Imaging Sensor

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