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We report, for the first time to our knowledge, experimental demonstration of wave-front analysis via the Hartmann technique in the extreme ultraviolet range. The reference wave front needed to calibrate the sensor was generated by spatially filtering a focused undulator beam with 1.7- and 0.6-microm-diameter pinholes. To fully characterize the sensor, accuracy and sensitivity measurements were performed. The incident beam's wavelength was varied from 7 to 25 nm. Measurements of accuracy better than lambdaEUV/120 (0.11 nm) were obtained at lambdaEUV = 13.4 nm. The aberrations introduced by an additional thin mirror, as well as wave front of the spatially unfiltered incident beam, were also measured.

. XM-2 was designed, built and is now operated by the National Center for X-ray Tomography as a National Institutes of Health Biomedical Technology Research Resource. XM-2 is equipped with a cryogenic rotation stage to enable tomographic data collection from cryo-preserved cells, including large mammalian cells. During data collection the specimen is illuminated with 'water window' X-rays (284-543 eV). Illuminating photons are attenuated an order of magnitude more strongly by biomolecules than by water. Consequently, differences in molecular composition generate quantitative contrast in images of the specimen. Soft X-ray tomography is an information-rich three-dimensional imaging method that can be applied either as a standalone technique or as a component modality in correlative imaging studies.

This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam exposure. The platform is highly absorbing (16 µm -1 ) and etch resistant (>100:1 for silicon). These properties enable resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity, metal-impurity content, outgassing, pattern transfer, and resist strip.

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The phase-shifting point-diffraction interferometer (PS/PDI) was recently developed and implemented at Lawrence Berkeley National Laboratory to characterize extreme-ultraviolet (EUV) projection optical systems for lithography. Here we quantitatively characterize the accuracy and precision of the PS/PDI. Experimental measurements are compared with theoretical results. Two major classes of errors affect the accuracy of the interferometer: systematic effects arising from measurement geometry and systematic and random errors due to an imperfect reference wave. To characterize these effects, and hence to calibrate the interferometer, a null test is used. This null test also serves as a measure of the accuracy of the interferometer. We show the EUV PS/PDI, as currently implemented, to have a systematic error-limited reference-wave accuracy of 0.0028 waves (lambda/357 or 0.038 nm at lambda = 13.5 nm) within a numerical aperture of 0.082.

Scanning illumination systems provide for a powerful and flexible means for controlling illumination coherence properties. Here we present a scanning Fourier synthesis illuminator that enables microfield extreme ultraviolet lithography to be performed on an intrinsically coherent synchrotron undulator beamline. The effectiveness of the system is demonstrated through a variety of print experiments, including the use of resolution enhancing coherence functions that enable the printing of 50-nm line-space features by use of a lithographic optic with a numerical aperture of 0.1 and an operational wavelength of 13.4 nm.