Chemical vapour deposition of boron subarsenide using halide reactants

Correia, L.A.; Oort, R.C. Van; Put, P.J. Van der

doi:10.1016/0168-7336(86)80083-3

Cited by 10 publications

(9 citation statements)

References 20 publications

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“…Single crystal substrates of B 12 As 2 are not available, and previous studies have deposited B 12 As 2 thin films onto a variety of substrates including Ni, W, Si and Al 2 O 3 . Hirayama et al 5 reported crystalline B 12 As 2 films on <111> and <110> Si, however, from the limited data presented, the films might well have been polycrystalline. Correia et al 6 also deposited B 12 As 2 films on <111> Si and other substrates, but observed either polycrystalline or amorphous B 12 As 2 depending on the gas flow conditions.…”

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confidence: 71%

Chemical vapor deposition of B12As2 thin films on 6H-SiC

Wang

Zubía

O'Neil

et al. 2000

J. Electron. Mater.

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The icosahedral borides such as boron arsenide (B 12 As 2 ), boron phosphide (B 12 P 2 ), exhibit an exceptional radiation hardness as a result of their unusual atomic structure and bonding. 1,2 It has been suggested that if these wide bandgap materials 3 could be suitably doped they would find application as radiation-hard and high-temperature semiconductor devices. 4 For example, we are currently exploring the use of B 12 As 2 for the fabrication of a "nuclear battery". Here, a simple pn junction structure (analogous to a solar cell) will be used to convert high energy beta radiation directly to electricity.Determination of the physical, electrical and optical properties of these materials has been hampered by the difficulty of obtaining high-quality crystalline samples. Single crystal substrates of B 12 As 2 are not available, and previous studies have deposited B 12 As 2 thin films onto a variety of substrates including Ni, W, Si and Al 2 O 3 . Hirayama et al. 5 reported crystalline B 12 As 2 films on <111> and <110> Si, however, from the limited data presented, the films might well have been polycrystalline. Correia et al. 6 also deposited B 12 As 2 films on <111> Si and other substrates, but observed either polycrystalline or amorphous B 12 As 2 depending on the gas flow conditions. Icosahedral boron arsenide (B 12 As 2 ) thin films were deposited on 6H-SiC substrates by chemical vapor deposition using B 2 H 6 and AsH 3 sources. X-ray diffraction analysis of the thin films showed them to have the rhombohedral crystal structure and lattice parameters of B 12 As 2 . Transmission electron microscopy showed that the films were polycrystalline with oriented crystal grains. The preferential orientation of the film with respect to the SiC substrate was determined to be: [0001] B 12 As 2 //[0001] 6H-SiC and [10 -10] B 12 As 2 // [10 -10] 6H-SiC to within 3°. Electron diffraction also revealed the extremely small lattice mismatch (<0.5%) between the B 12 As 2 basal-plane lattice parameter and twice the SiC basal-plane lattice parameter.Keywords: B 12 As 2 , thin films, CVD, 6H-SiC, substrates oriented, B 12 As 2 thin films on 6H SiC substrates by chemical vapor deposition (CVD). The basal plane lattice parameter of B 12 As 2 , which was reported previously 7 to be 6.139 Å, is closely matched to twice the SiC basal plane lattice parameter (3.077 Å).The B 12 As 2 films were grown by CVD on <0001> and 3.5° off <0001> 6H-SiC substrates (Cree Research Inc.) in an RF-heated, horizontal-geometry reactor. The n-type SiC substrates were approximately 300 µm thick and had a bulk resistivity of approximately 0.1 Ω-cm. The substrates were degreased, then dried under nitrogen gas before being loaded into the CVD reactor. CVD films were grown using dilute sources of diborane (1% B 2 H 6 in H 2 ) and arsine (1% AsH 3 in H 2 ), which provided boron and arsenic, respectively. For the B 12 As 2 films described here the flow rate was 50 sccm for each of the source gases. A hydrogen carrier gas flow rate of 5 slm was also used. At a...

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confidence: 71%

Chemical vapor deposition of B12As2 thin films on 6H-SiC

Wang

Zubía

O'Neil

et al. 2000

J. Electron. Mater.

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“…Silicon is an alternative substrate worth consideration for the B 12 As 2 thin film deposition, since Si substrates offer several advantages over SiC, including much lower costs, the availability of larger area substrates and the possibility of combining Si logic circuits with boride power sources on a single substrate. Previous results showed that the B 12 As 2 films formed on Si substrates at 1150 °C by chemical vapor deposition were amorphous or polycrystalline [8][9][10]. The orientation relationships obtained by Hirayama et al [8] In this article the nucleation behavior, the deposit morphology, and the orientation texture of B 12 As 2 thin films formed on the three most common silicon substrates orientations are described.…”

Section: Introductionmentioning

confidence: 97%

“…The literature on the growth of B 12 As 2 crystals is very limited [7][8][9][10]. Recently, B 12 As 2 thin films have been deposited on 6H-SiC (0001) substrates at process temperatures up to 1400 °C [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial B12As2 on silicon substrates

Zong-ze

Edgar

Speakman

2006

Journal of Crystal Growth

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The morphology and crystal structure of rhombohedral B 12 As 2 thin films prepared by chemical vapor deposition on Si (100), Si (110) and Si (111) substrates were examined.For short depositions, 30 seconds at 1300 °C, the B 12 As 2 nucleated in patterns that were unique to each substrate orientation, probably due to variations in the surface atomic structure and surface activation energy of the substrates. Small square domains, one dimensional straight lines, and irregular lines were the representative morphologies on Si (100), Si (111) and Si (110), respectively. For long deposition, 30 minutes at 1300 °C, continuous thin films of B 12 As 2 formed with distinct morphologies also dependent on the orientation of the substrates. "Cross", "wire" and "chain" morphologies were formed on the Si (100), Si (111) and Si (110) substrates, respectively. X-ray diffraction showed that the B 12 As 2 films had the following predominant oriented textures: B 12 As 2 (110) on Si(100), B 12 As 2 (101) on Si(111), and B 12 As 2 (001) on Si(110). The in-plane orientations of the B 12 As 2 films as determined by XRD pole figures, is also reported.2

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“…Earlier Hirayama and Shohno [14] and Correia et al [15] reported the growth of B 12 As 2 films by CVD on Si/1 0 1S, /1 1 0S and /1 1 1S and other substrates. The films thus obtained were either amorphous or polycrystalline.…”

Section: Introductionmentioning

confidence: 98%

“…While there are many reports on the crystal growth of BP and B 12 P 2 [1][2][3][4][5][6][7][8][9][10][11], the literature on BAs and B 12 As 2 is scant [12][13][14][15][16][17], one of the reasons being the difficulty involved in their synthesis. B 12 P 2 and B 12 As 2 have an icosahedral structure that consists of 12 boron atom icosahedra located at the corners of the rhombohedral cell and the phosphorous or arsenic atoms lie on the three-fold rotation axis.…”

Section: Introductionmentioning

confidence: 99%