No abstract

The high-pressure electrical transport behavior of microcrystalline tungsten trioxides (WO3) was investigated by direct current electrical resistivity measurement and alternate current impedance spectrum techniques in a diamond anvil cell up to 35.5 GPa. Discontinuous changes of electrical resistivity occurred during the pressure induced structure phase transitions at 1.8, 21.2, and 30.4 GPa. The irreversible resistivity reveals that the structure phase transition is not reversible. In addition, the abnormal changes of bulk resistance and transport activation energy at about 3 and 10 GPa are related to the isostructural phase transition reported by previous Raman study. The temperature induced resistivity change indicates that WO3 is a semiconductor from ambient pressure to 25.3 GPa.

Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure−based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up−to−date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide−based advanced devices for optical and electronic applications including photodetectors, light−emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3−related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

The electrical transport behavior of SnS under high pressure has been investigated by the temperature dependence of electrical resistivity measurement, the in situ Hall-effect measurement, and the first-principle calculation. The experimental results show that SnS undergoes a semiconductor to semimetal transition at ∼10.3 GPa, and this transition is further substantiated by the band-structure calculation. The total and partial density of states predict that the semimetal character of SnS is attributed to the enhanced coupling of Sn-5s, Sn-5p, and S-3p states with application of pressure. In addition, dramatic changes in electrical transport parameters such as the electrical resistivity, the carrier concentration, and the carrier mobility are observed at 12.6 GPa, which are correlated to the pressure-induced Pnma-Cmcm structural phase transition.

Pressure effects on the ionic transport and optoelectrical properties of lead halide perovskites are still largely terra incognita. Herein, we have conducted in situ alternating current (AC) impedance spectroscopy on both CsPbBr3 powders and single crystals with random planes at pressures of up to 9.2 GPa and 6.8 GPa, respectively. Through the selection of different simulation equivalent circuit models of AC impedance spectroscopy, we have obtained the pressure-dependent electrical parameters of CsPbBr3. The current results indicate that all the CsPbBr3 samples show mixed ionic-electronic conduction from ambient pressure to 2.3 GPa and pure electronic conduction at pressures above 2.3 GPa. We have also conducted in situ photocurrent measurements on CsPbBr3 powders at pressures up to 2.9 GPa. The emergence of extremely sharp and needle-like peaks at every moment of light irradiation at pressures below 2.3 GPa is attributed to the mixed conduction within CsPbBr3, and the photocurrent of CsPbBr3 could hardly be detected at pressures above 2.9 GPa. Additionally, the photoelectric response of CsPbBr3 can be enhanced by compression, and the strongest photocurrent value appears in the high-pressure phase at 1.4 GPa.

A two-electrode configuration was adopted in an in situ impedance measurement system to determine the ionic conductivity at high pressures in a diamond anvil cell. In the experimental measurements, Mo thin-films were specifically coated on tops of the diamond anvils to serve as a pair of capacitance-like electrodes for impedance spectrum measurements. In the spectrum analysis, a Warburg impedance element was introduced into the equivalent circuit to reveal the ionic transport property among other physical properties of a material at high pressures. Using this method, we were able to determine the ionic transport character including the ionic conductivity and the diffusion coefficient of a sodium azide solid to 40 GPa.

We carried out the accurate in situ Hall-effect measurements, the temperature dependence of electrical resistivity measurements and the first-principles calculations in SnO under high pressure. The results of Hall-effect measurements display the carrier transport behavior of SnO under pressure, which indicates that SnO undergoes a carrier-type inversion around 1.3 GPa and an underlying phase transition at 2–3 GPa. In addition, the temperature dependence of electrical resistivity shows that SnO undergoes a semiconductor-to-metal transition around 5 GPa. The calculated band structures based on the first-principles method illustrate that the indirect band gap of SnO vanishes around 4 GPa. In particular, the results of total and partial density of states indicate that the closure of the indirect fundamental gap is mostly attributed to Sn-5s and 5p states hybridized with O-2p states at the Fermi level.

No abstract