2021
DOI: 10.3390/nano11082136
|View full text |Cite
|
Sign up to set email alerts
|

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

Abstract: Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracte… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
37
1
2

Year Published

2022
2022
2023
2023

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 79 publications
(42 citation statements)
references
References 108 publications
0
37
1
2
Order By: Relevance
“…The dashed lines indicate that the proposed CSE has a considerably higher FoM than the other transparent electrodes. The lower sheet resistance of the CSE can be attributed to the negligible longitudinal resistance of the sandwiched WO 3 , as explained in Supplementary Information [ 26 ]. Hence, CSE exhibits low sheet resistance and a well-matched work function, which is beneficial for efficient charge injection.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The dashed lines indicate that the proposed CSE has a considerably higher FoM than the other transparent electrodes. The lower sheet resistance of the CSE can be attributed to the negligible longitudinal resistance of the sandwiched WO 3 , as explained in Supplementary Information [ 26 ]. Hence, CSE exhibits low sheet resistance and a well-matched work function, which is beneficial for efficient charge injection.…”
Section: Resultsmentioning
confidence: 99%
“…To solve this problem, we have explored inorganic oxide materials that can replace conventional organic materials and selected an Ag/WO3/Ag structure as a cavity-suppressing transparent cathode for TADF-TEOLEDs. In this structure, we used WO 3 as a metal oxide layer because it is known as an n-type dielectric material with a high refractive index, low optical loss in the visible region, and high electron mobility; further, it can be readily deposited by means of thermal evaporation [ 25 , 26 ]. The optical transmittance of Ag/WO 3 /Ag-based cavity-suppressing electrode (CSE) can be tuned by varying the thickness of the WO 3 layer without compromising its sheet resistance [ 27 ].…”
Section: Introductionmentioning
confidence: 99%
“…Transition metal oxides nanowires are known as an important class of materials with a rich collection of physical and chemical properties due to their superior performances based on quantum confinement effects for various general applications, including electronic devices, optical devices, gas sensors, photovoltaics, photonic devices, energy storage devices, and catalysts [1][2][3][4][5]. The fabrication of one-dimensional (1 D) nanostructures of transition metal oxides semiconductor Nanostructured Materials -Classification, Growth, Simulation, Characterization, and Devices (TMOS) nanowires and nanorods has been recently fascinating for the next-generation high-performance "trillion sensor electronics" era for Internet of things (IoT) applications, mainly due to their high surface to volume ratio, high crystallinity, and low power consumption [6][7][8][9][10]. The ultrathin nanowires that have below 10 nm diameter offer interesting characteristics including new surface determined structures by tuning the surface chemistry of surfaces [11,12].…”
Section: Introduction 11 Transition Metal Oxides Nanowiresmentioning
confidence: 99%
“…Orthorhombic, cubic, triclinic, monoclinic, tetragonal, hexagonal, and orthorhombic WO3 structures have been reported. It could be used in optical and electrical applications because it has a high melting point, is photoelectrochemical, is hard, and has good mechanical properties [2]. When compared to sulphides, selenides, or halides, metal oxides appear to be especially attractive due to their lower molecular weight and/or toxicity.…”
Section: Introductionmentioning
confidence: 99%