2011
DOI: 10.1021/jp206245m
|View full text |Cite
|
Sign up to set email alerts
|

Electrical Transport Properties of SnO under High Pressure

Abstract: We carried out the accurate in situ Hall-effect measurements, the temperature dependence of electrical resistivity measurements and the first-principles calculations in SnO under high pressure. The results of Hall-effect measurements display the carrier transport behavior of SnO under pressure, which indicates that SnO undergoes a carrier-type inversion around 1.3 GPa and an underlying phase transition at 2–3 GPa. In addition, the temperature dependence of electrical resistivity shows that SnO undergoes a semi… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
18
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 28 publications
(20 citation statements)
references
References 27 publications
(47 reference statements)
2
18
0
Order By: Relevance
“…Tin (II) oxide (SnO) crystallizes in a tetragonal structure with P4/nmm space group symmetry and our optimized lattice parameters are found to be a = b = 3.84 Å and c = 4.81 Å at Perdew-Burke-Ernzerhof functional (PBE) level including D3-Grimme corrections for van der Waals (VDW) interactions, in quite good agreement with other theoretical reports [38][39][40][41]. In this crystal, Sn-O-Sn layers interact through weak dispersive forces with a calculated interlayer distance of 3.69 Å.…”
Section: Bulk Calculationssupporting
confidence: 88%
See 1 more Smart Citation
“…Tin (II) oxide (SnO) crystallizes in a tetragonal structure with P4/nmm space group symmetry and our optimized lattice parameters are found to be a = b = 3.84 Å and c = 4.81 Å at Perdew-Burke-Ernzerhof functional (PBE) level including D3-Grimme corrections for van der Waals (VDW) interactions, in quite good agreement with other theoretical reports [38][39][40][41]. In this crystal, Sn-O-Sn layers interact through weak dispersive forces with a calculated interlayer distance of 3.69 Å.…”
Section: Bulk Calculationssupporting
confidence: 88%
“…Furthermore, the D3-Grimme [48] correction was applied to describe van der Waals interactions. As a first step, the lattice parameters and ionic positions of tin (II) oxide (SnO) and tin (II) oxyhydroxide (Sn 6 O 4 (OH) 4 ) were fully optimized starting from the available crystallographic data [37][38][39]41]. The cutoff energy of 700 eV was used for the plane-waves basis set for both compounds, whereas 7 × 7 × 7 and 8 × 8 × 6 Monkhorst−Pack k-point meshes were used for SnO and Sn 6 O 4 (OH) 4 , respectively.…”
Section: Methodsmentioning
confidence: 99%
“…As seen, the dielectric constant ε ′ of SnO 2 nanoparticles increases with pressure in all frequency regions. The dielectric behaviour is strongly related to their conduction mechanism 32,33 . At higher pressure, the charge carrier mobility and the rate of hopping increase, hence, the dielectric polarisation increases, causing an increase in the dielectric constant.…”
Section: Resultsmentioning
confidence: 99%
“…Metal oxides have recently attracted particular attention because of their unique physical and chemical properties. [1][2][3] As an important functional material, indium oxide (In 2 O 3 ), an n-type semiconducting binary oxide with a wide band-gap (3.5-3.7 eV), has attracted much interest for several decades due to its high electrical conductivity and good optical transparency. 4,5 There are three different crystal structures of In 2 O 3 : cubic bixbyite-type (c-In 2 O 3 ) stable under ambient conditions, hexagonal corundum-type (h-In 2 O 3 ) and orthorhombic Rh 2 O 3 (II)-type structures stable only under high pressures and temperatures.…”
Section: Introductionmentioning
confidence: 99%