A helium-3 ion bombardment technique is proposed to realize high-Q inductors by creating locally semi-insulating substrate areas. A dose of 1.0 × 10 13 cm −2 helium-3 increases a Si substrate resistivity from 4• cm to above 1 k • cm, which improves the quality factor of a 2-nH inductor with a 140-μm diameter by 38% ( Q = 16.3). An aluminum mask is used for covering active areas, and at least 15-μm distance from the mask edge is required to avoid the p-n junction leakage. The proposed technique is applied to an 8-GHz oscillator, and an 8.5 dB improvement of the measured phase noise has been achieved.
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