A study of the effect of 1- and 12-MeV electron and Co60 γ irradiation has been made on power p-i- n diodes and Schottky barrier diodes fabricated on the same starting material. A comparison of the results from these two types of structures illustrated the influence of device processing on the type of defects formed by subsequent irradiation. Detailed electrical characterization of the defects demonstrated good consistency between certain elements of the structural nature of the defect, inferred from these measurements, and those already obtained from electron spin resonance (ESR) measurements. Lifetime measurements on the p-i-n diodes indicated that both the A center and the divacancy were active recombination centers. Finally, data are presented on defect and lifetime annealing.

Abstract-A 402-405 MHz MICS band transceiver has been developed for implantable medical applications. The transceiver offers exceptionally low power consumption whilst providing a high data rate. The circuit features a unique ultra low power wakeup system enabling an average sleep current of less than 250 nA. The transmit and receive current is less than 5 mA when operating at a data rate of up to 800 kbps. System integration is high and only 3 external components (crystal and 2 decoupling capacitors) and a matching network are required. The transceiver can also operate in the 433 MHz ISM band. The key system design features and performance of this transceiver are presented in this paper.

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Iron has been diffused into p- and n-type silicon containing various concentrations of carbon and oxygen. Apart from the established iron interstitial level and the iron-boron complex, no new centers were detected involving iron complexing with either the carbon or the oxygen. The iron-boron level was shown to dissociate by a recombination-enhanced mechanism and a deep acceptor level of this complex was detected at Ec −0.29 eV, which must be the recombination level rather than the well-established level at Ev +0.1 eV.

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