Iron and the iron-boron complex in silicon

Abstract

Iron has been diffused into p- and n-type silicon containing various concentrations of carbon and oxygen. Apart from the established iron interstitial level and the iron-boron complex, no new centers were detected involving iron complexing with either the carbon or the oxygen. The iron-boron level was shown to dissociate by a recombination-enhanced mechanism and a deep acceptor level of this complex was detected at Ec −0.29 eV, which must be the recombination level rather than the well-established level at Ev +0.1 eV.

Defect characterization on intentionally metal-contaminated silicon samples

“…32 In the present case enhanced absolute Chi 2 values in the range of 0.32 to 0.55 reveal a medium quality of the SRH fits, which queries the accuracy of the spectroscopic TDLS results. A visual inspection of the fitted TDLS curves shows that the slope of the fitted curves slightly overestimates the actually measured Arrhenius slope in both cases (see Figs.…”

Interstitial Fe in Si and its interactions with hydrogen and shallow dopants

“…14 and 29-34͒ and a deep acceptor level near E c − 0.29 eV. 20,30,34 These values have recently been confirmed by temperature-dependent and injection-dependent lifetime spectroscopy data. 35 A second acceptor level at E v + 0.074 eV ͑Refs.…”

Observation of Long Relaxation from Fe0(3d8) to Fe+(3d7) by Electron Spin Resonance Measurement

“…In particular, the atomic configuration and energy level of an Fe-B pair have been studied by electron spin resonance (ESR) measurement [1][2][3] and deep-level transient spectroscopy (DLTS). [4][5][6][7][8] Moreover, the recombination-enhanced dissociation of the Fe-B pair has been observed by ESR 3) and DLTS. 5,9) On the other hand, the change in the charge state of the isolated Fe by the capture of a carrier has attracted little attention.…”