Defect production and lifetime control in electron and γ-irradiated silicon

Abstract

A study of the effect of 1- and 12-MeV electron and Co60 γ irradiation has been made on power p-i- n diodes and Schottky barrier diodes fabricated on the same starting material. A comparison of the results from these two types of structures illustrated the influence of device processing on the type of defects formed by subsequent irradiation. Detailed electrical characterization of the defects demonstrated good consistency between certain elements of the structural nature of the defect, inferred from these measurements, and those already obtained from electron spin resonance (ESR) measurements. Lifetime measurements on the p-i-n diodes indicated that both the A center and the divacancy were active recombination centers. Finally, data are presented on defect and lifetime annealing.

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

“…Both of them introduce electrical levels in the gap and their presence is critical for lifetime control of Si-based electronic devices. 57,58 Concerning VO defect, our results indicate that Sn doping, at a concentration of $10 19 cm…”

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

“…lt may be possible to minimize the bulk displacement damage of fast neutrons by controlling the initial impurities in the silicon crystal. Oxygen, for example, has been used [6][7] to "getter" vacancies (V) through the formation of the A-center (O-V, E e -0.18 eV), and because of its competition for the damage-induced vacancies, decrease the concentration of the deeper E-Center (P-V, Ec -0.44 eV) and the divancy, which are much more effective SRH gneration centers than A-center. Thus, gettering of vacancies might help to decrease the leakage current degradation and donor removal.…”

“…The junction detectors used in this study were implanted p+-n-n + detectors made on n..type < 111> silicon wafers, with intermediate resistivities of 0. i5 kg,-cm in order to directly compare float zone (lower as-grown oxygen) and Czochralski (high as-grown oxygen, available only up to this resistivity) and representative, high resistivity, detector grade, float zone material of 4 kf_-cm. Different oxides, with oxidation temperature ranging from 975°C to 1200°C, were used to introduce various concentrations of oxygen [6], into the high resistivity FZ silicon. Fast neutrons from 10 keV to 2.2 MeV, with E = 1 MeV, were obtained from the 7Li(p,n) reaction using 4 MeV protons.…”

“…If one pursues the possibility of the A-centers being surface concentrated, one can consider the oxidation conditions. The 1200C oxidation parameters were chosen to follow [6] who after reasonable assumptions about the source oxygen concentration believe one achieves a concentration of at least 1017/cm2, to be equivalent to CZ material, throughout the bulk of the wafer with an approximate diffusion length of 60_m. The lower temperature oxidations give diffusion lengths of a few microns.…”

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

“…8 It is established 9,10 that most of the Si self-interstitials (Si I ) are readily trapped by C s defects, which are shifted off lattice sites so that C interstitials (C i ) form. Importantly, radiation defects such as C i C s pairs introduce 11,12 electronic levels in the Si band gap, affecting the efficiency of corresponding devices. In general, the performance of Si as optical emitter is limited by its indirect band gap, where introduction of optically active C-related G-centers is a promising approach to improve the efficiency because the sharp luminescence peak at 1.28 lm matches the important optical communication wavelength of 1.30 lm.…”