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Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and N 2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of −15 V applied to the metal electrode for 10 −6 s causes a flatband voltage shift of ϳ1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost.

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A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×1010 cm·Hz1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.

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Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium compositionGreen-light-emission InGaN / GaN multiple quantum wells ͑MQWs͒ with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga-and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions ͑In-rich dots and an InGaN matrix͒ seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.

In this paper, 316L stainless steel powder was processed and formed by selective laser melting (SLM). The microstructure of the sample was studied using an optical microscope, and the fatigue failure of the sample and the characteristics of crack initiation and propagation were analyzed, providing a research basis for the application of SLM-316L. Due to the influence of microstructure and SLM process defects, the fatigue cracks of SLM-316L mainly emerged due to defects such as lack of fusion and pores, while the cracks of rolled 316L initiated at the inclusions near the surface of the specimen. After fatigue microcrack initiation of the SLM-316L specimen, due to the existence of shear stress and tear stress, the crack tip was passivated and Z-shaped propagation was formed. The existence of internal defects in SLM-316L made the microcrack initiation random and diverse. At the same time, the existence of defects affected the crack propagation in the form of bending, bifurcation and bridge, which made the main crack propagation deviate from the maximum load direction.

A nanocrystal Si ͑nc-Si͒ distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO 2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also.