Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells

Lai, Yu-Cheng; Liu, Chuan Pu; Lin, Yung Hsiang; Lin, Ray-Ming; Lyu, Dong Yuan; Zhao, Peng; Lin, Tay-Jyi

doi:10.1063/1.2360247

Cited by 26 publications

(13 citation statements)

References 7 publications

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“…The InGaN MQW emission peak of the Ga-polar sample exhibited the common S-shaped peak move, 26) which was less pronounced for the N-polar sample probably because of the broad emission. 27) The broad emission also concealed possible phonon replicas in the N-polar case. The weak emission features between 3.47 eV and InGaN peak are believed to originate from the GaN:Si base layer (Fig.…”

Section: Methodsmentioning

confidence: 97%

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

Masui

Keller

Fellows

et al. 2009

jjap

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Nitrogen-and Ga-polar GaN and InGaN/GaN multiple quantum-well (MQW) films were prepared via metal organic chemical vapor deposition and evaluated via photoluminescence at reduced temperatures in order to compare their optical characteristics. While N-and Ga-polar GaN films grown at standard high temperatures were comparable in terms of photoluminescence at tested temperatures, the Npolar InGaN MQW quality was inferior to their Ga-polar counterparts, confirmed with greater enhancement in luminescence intensity from 300 to 10 K and unobservable phonon replicas at 10 K for the N-polar InGaN MQW due to the broad emission peak. Additionally performed electroluminescence studies on N-polar light-emitting diode samples indicated that the poor luminescence of the N-polar samples was not related to electric field effects. Influence of residual impurities (C and O) was strongly suggested via secondary ion mass spectroscopy, leading us to conclude that the poor luminescence properties of the N-polar InGaN MQWs were predominantly caused by the elevated residual impurity concentrations in the N-polar (In,Ga)N layers grown at low temperatures. #

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Section: Methodsmentioning

confidence: 97%

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

Masui

Keller

Fellows

et al. 2009

jjap

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“…In addition, based on the very different chemical reactivity of N-and Ga-face GaN to KOH solution, it is very simple to pattern GaN by polarity-selective chemical wet etching [8,9]. It is possible to use Mg-doping to invert the polarity of Ga-face III-Nitride (but may not completely) [10][11][12]. N-face GaN can be obtained on C-face SiC [13,14] and nitridized c-plane sapphire [15,16].…”

Section: Introductionmentioning

confidence: 99%

N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Sun

Cho

Kong

et al. 2009

Journal of Crystal Growth

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“…Therefore, the localized states gradually dominate the emission at higher temperature and the FWHM increases with temperature. The T-dependence of integrated PL intensity I PL could be expressed as [3,4] …”

Section: Temperature (T)-dependent Photoluminescence (Pl) Of Ingan/gamentioning

confidence: 99%

Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

Lee

Feng

et al. 2007

SPIE Proceedings

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The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) grown on sapphire by metalorganic chemical vapor deposition (MOCVD) have been investigated by optical measurements of temperature-dependent photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL), and structural analysis methods of high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). Two typical samples are studied, both consisting of five periods of InGaN wells with 1.6 nm thickness with different indium compositions of 21 and 24%, respectively. The thickness of the GaN barrier was 7.9 nm. According to the PL and PLE measurement results, large values of activation energy and Stokes' shift are obtained. This indicates that higher In composition results in the increase of composition fluctuation in the InGaN MQW region, showing the stronger carrier localization effect. The lifetime at the low-energy side of the InGaN peaks is longer for higher indium composition, as expected from the larger Stokes shift.

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Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells

Cited by 26 publications

References 7 publications

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

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