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As CMOS technology feature sizes decrease, random within-die and inter-die process variations more and more jeopardizeSoCparametricandfunctionalyield.Largely neglectedintheState-Of-the-Art,dynamicenergyconsumption and power dissipation becomes heavily affected. This paper describes a technique to systematically bring statistically correlated timing/energy variations all the way up from the device to the SoC level. We propose a flow for Variability Aware Modeling (VAM) and apply it to a case study using a industrial test vehicle.978-1-4244-2953-0/09/$25.00

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Single transistor Floating Body Random Access Memories (FB-RAMs) are foreseen to bring size and speed benefits and have the potential to replace existing DRAMs. However, the implementation in matrix is complex because the voltages applied to access one cell can disturb the state of other cells. We propose an approach at circuit level to provide compatible bias conditions and to explore further on the optimization of the biasing voltages for improved write and read operations and improved retention. To do so we use synchronized bitline and wordline drivers providing different voltages to selected and unselected lines during the different operations. In addition, a robust sensing scheme is described that can be implemented in the same process technology as the array. The full circuit has been validated by simulations based on the experimental data of fabricated bulk FinFETs floating body cells and the design has been taped out.