2012 4th IEEE International Memory Workshop 2012
DOI: 10.1109/imw.2012.6213643
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Spacer-Defined EUV Lithography Reducing Variability of 12nm NAND Flash Memories

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Cited by 2 publications
(2 citation statements)
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“…In the category of process technology, we include all mitigation techniques that are employed during the processing of the wafer so that the target design can be taped out with minimal parametric violations. Such techniques may pertain either to the choice of materials [266,82] or the lithography techniques [286,285,205].…”
Section: Single Diementioning
confidence: 99%
See 1 more Smart Citation
“…In the category of process technology, we include all mitigation techniques that are employed during the processing of the wafer so that the target design can be taped out with minimal parametric violations. Such techniques may pertain either to the choice of materials [266,82] or the lithography techniques [286,285,205].…”
Section: Single Diementioning
confidence: 99%
“…Pre-Fab Design Related Design Optimization [126,10], [286] Capability Addition [209,284] Process Technology Materials [82,266] Lithography [286], [205,285] Post-Fab Before Market Non-Intrusive [238,153,165] Intrusive [80,206,70] After Market Reactive [291,216], [180] Chapters 5 and 6…”
Section: Single Diementioning
confidence: 99%