Focused ion beam fabrication of metallic nanostructures on end faces of optical fibers for chemical sensing applications J.Surface plasmon polariton modes in a single-crystal Au nanoresonator fabricated using focused-ion-beam milling Appl. Phys. Lett. 92, 083110 (2008); 10.1063/1.2885344Mechanical property evaluation of Au-coated nanospring fabricated by combination of focused-ion-beam chemical vapor deposition and sputter coating Because of their ability to both mill and deposit material with submicron resolution, focused ion beams are now used to repair photolithography masks and are of increasing technological interest in the repair of x-ray lithography masks and in integrated circuit restructuring. With the latter two applications in mind, we have fabricated milled and deposited Au features with linewidths of <;0.1 {lm using a 40 keY Ga focused ion beam. In addition, we present the results of a study parameterizing focused ion beam induced Au deposition under conditions of practical interest. Milling is accomplished by simple physical sputtering. Examples of milled microfeatures include a grating with a 210 nm period milled through a 5000 A thick evaporated Au film. Deposition is accomplished by ion bombarding a Si0 2 substrate on which a precursor gas, dimethyl gold hexafluoro acetylacetonate, is continuously being adsorbed. Examples of deposited Au features include a 3 X 3 {lm patch I-{lm-thick with steep sidewalls. The deposition rate was measured at room temperature as a function of ion and precursor flux, and a simple model of the process is fitted to the data. Ion beam induced deposition efficiency is shown to depend critically on the time averaged beam current density and only weakly on the precursor flux. The maximum achievable growth rate is shown to be -10 A/s. Deposited Au films contain 30-60 at. % carbon and have conductivities 200-600 times less than that of bulk Au. Those films formed using lower organometallic pressures or higher ion beam current densities are characterized by greater purity with more continuous microstructure.
Damage formation at grain boundary junctions has long been recognized as the dominant electromigration failure mechanism in metal lines. We report the results of drift-velocity experiments on fine lines with no reservoirs and find that the interfacial mass transport, along the edges of the lines, is faster than that along grain boundaries. This causes mass depletion at the cathode end of the line, leading to electromigration failure. The result demonstrates a new failure mechanism due to electromigration in submicron lines with bamboo grain structures.
The application of focused ion beams to the repair of defects in x-ray masks is described. An image of the defective region on the mask is obtained using the ion beam in a manner analogous to a scanning electron microscope. Opaque defects are removed by physical sputtering of extra absorber. Clear defects are repaired by ion-beam-induced decomposition of an organometallic compound to form an opaque film on the substrate. Examples illustrating the repair process and demonstrating submicron spatial resolution are presented. The effect of ion channeling on imaging and opaque repair is also described.
Focused ion beam induced deposition of gold microfeatures is accomplished by 40 keV Ga+ bombardment of a substrate on which dimethyl gold hexafluoro acetylacetonate is continuously adsorbed. Under optimum conditions, deposition rates exceeding 11 Å/s have been achieved as well as high aspect ratio features, linewidths of approximately 0.1.μm, and resistivities of 500—1500 μΩcm. The microstructure, composition, and yield of the deposits have been examined as a function of various process parameters. Improved film growth and purity are observed in deposits made with lower organometallic pressures or higher current densities.
Scanning ion microscopy (SIM) employing focused ion beam (FIB) imaging was used to study the grain structure of thin copper films as a function of annealing temperature from 20 to 500 °C. Accurate measurement of grain size is obtained for grains as small as 60 nm, allowing the microstructure of copper to be analyzed on small-grained samples which show poor contrast in scanning electron microscopy. Moreover, the short sample preparation time provides an advantage over transmission electron microscopy (TEM). The growth and coalescence of small (<100 nm) grains in the initially bimodal grain size distribution occurs in the temperature range of 250–350 °C in films of 1000 nm thickness. This grain growth takes place concurrently with the relaxation of compressive stress as observed by temperature-ramped stress measurement. Also, temperature-ramped in situ TEM examination confirms that coarsening of small grains is the dominant grain growth mechanism up to 500 °C.
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