X-ray mask repair with focused ion beams

Wagner, Alfred; Levin, J.; Mauer, J. L.; Blauner, Patricia G.; Kirch, S. J.; Longo, P.

doi:10.1116/1.585115

Cited by 73 publications

(15 citation statements)

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“…Interestingly, the increased current broadens the pillars, although it reduces-see figure 8-both the deposition efficiencies for SE 1 and SE 2 electrons due to a decreased surface coverage. However, the relative SE 2 contribution increases and in steady state becomes much larger than the relative SE 1 contribution.…”

Section: Discussionmentioning

confidence: 99%

“…Owing to its high flexibility regarding the shape and location of the deposits, IBID is becoming increasingly popular as a tool for prototyping threedimensional nanostructures [1,2]. So far, almost all IBID work is performed with Ga + focused ion beams (FIB), which have at best a probe size of 5 nm [3].…”

Section: Introductionmentioning

confidence: 99%

“…Despite the small probe size, structures grown with a stationary FIB-i.e. pillars-usually have a diameter of more than 100 nm [1,[6][7][8]. In addition, Ga-IBID pillars have rough sidewalls and relatively blunt tops [8].…”

Section: Introductionmentioning

confidence: 99%

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Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH 3 ) 3 Pt(C P CH 3 ) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current.Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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“…[1][2][3] This technique, so-called ion beam induced deposition (IBID), is successfully used to repair electronic devices and photomasks. 4,5 The main advantages of IBID are the deposition of the desired patterns of films without the need of a template, such as a mask or resist, and the ability to correct or modify only parts of the overall circuit design, without restarting the whole lithographic process. Furthermore, one recent promising application of IBID is the growth of three-dimensional (3D) nanostructures.…”

mentioning

confidence: 99%

Focused-ion-beam-induced deposition of superconducting nanowires

Sadki¹,

Ooi²,

Hirata³

2004

Applied Physics Letters

142

165

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Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO) 6 , as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is J c = 1.5 10 5 A/cm 2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.

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“…Focused ion beam (FIB) [9,11] is a very versatile technique to remove or to deposit materials. Because of its ability to focus an ion beam to a spot size of a few nanometers, FIB has found numerous applications [12] in nanofabrication.…”

Section: Introductionmentioning

confidence: 99%

Focused Ion Beam Fabrication of Individual Carbon Nanotube Devices

Chow

Chai

2007

MRS Proc.

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Focused ion beam (FIB) techniques have found many applications in nanoscience and nanotechnology applications in recent years. However, not much work has been done using FIB to fabricate carbon nanotube devices. This is mainly due to the fact that carbon nanotubes are very fragile and energetic ion beam from FIB can easily damage the carbon nanotubes. Here we report the fabrication of carbon nanotube (CNT) devices, including electron field emitters, atomic force microscope tips, and nano-pores for biomedical applications. This is made possible by a unique, coaxial configuration consisting of a CNT embedded in a graphitic carbon coating, which was developed by us for FIB processing of carbon nanotubes. The CNT-based atomic force microscope tip has been demonstrated. The electron field emission from the tip and the side wall of CNT will be discussed. We will also report the fabrication of a multiwall carbon nanotube nanopore for future applications.

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X-ray mask repair with focused ion beams

Cited by 73 publications

References 0 publications

Nanopillar growth by focused helium ion-beam-induced deposition

Nanopillar growth by focused helium ion-beam-induced deposition

Focused-ion-beam-induced deposition of superconducting nanowires

Focused Ion Beam Fabrication of Individual Carbon Nanotube Devices

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