The Microstructure of Gold Films Written by Focused Ion Beam Induced Deposition

Blauner, Patricia G.; Ro, Jae-Sang; Butt, Y.; Thompson, Carl V.; Melngailis, J.

doi:10.1557/proc-129-483

Cited by 12 publications

(11 citation statements)

References 13 publications

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“…This trend was also observed in gold deposition from dimethyl gold hexafluoro-acetyl-acetonate [28]. The reduced fractions of contaminants were attributed to the increased rate of desorption of byproducts, such as Cu(hfac)2 and TMVS in figure 3-4, at higher deposition temperatures.…”

Section: -3 Resistivitysupporting

confidence: 55%

“…The substrate temperature during laser irradiation was measured and calculated with a heat transfer model at various laser powers as a function of time. The resistivities and microstructures of these films are compared with those of the previous studies by Della Ratta [19] and Blauner [28] at equivalent deposition temperatures.…”

Section: Resultsmentioning

confidence: 99%

“…To raise the substrate temperature is found to be effective in reducing the resistivity while the deposition yield remains the same for gold deposition [28], or is improved by a factor of two for copper [19]. The resistivity of gold films deposited above 120 °C, and that of copper above 100 °C, are very close to the bulk values, 2.4 and 1.7 gQ-cm for Au and Cu, respectively.…”

Section: S Zl 2 2/3 Mi+m 2 )mentioning

confidence: 90%

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Laser assisted focused-ion-beam-induced deposition of copper

Funatsu

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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As the minimum feature size becomes on the order of submicron dimensions, techniques to directly repair VLSI circuits and x-ray masks, techniques for so-called "microsurgery", are increasingly important. Focused ion beam (FIB) techniques have been commercially used to deposit conductors and insulators and remove materials in a localized area on substrates. Copper, which is a candidate future conductor material in VLSI circuits due to its low resistivity and high electromigration resistance, has been deposited from the organometallic complex, Cu(hfac)TMVS, using 25 keV gallium ions from liquid ion source. Earlier work has shown that substrate heating can lead to FIB-induced deposition of high conductivity Cu lines. In this work, use of a laser for localized heating for FIB-induced deposition has been investigated as an alternative to heating of the entire substrate. For laser-assisted FIB-induced deposition, a "high power" :semiconductor laser, of wavelength 977 nm and output power ranging continuously from 0 to 1.2 W, was used. The laser was focused onto a thermally oxidized Si substrate, and its spot area is estimated to be 5.90x10 -5 cm 2 , which gives the maximum intensity of 2.0x10 4 W/cm 2 . Cu(hfac)TMVS has no absorption in the gas phase at 977 nm. As a result, for films deposited using this laser, the dependencies of the growth rate and resistivity on the estimated substrate temperature are in good agreement with those of films deposited using conventional resistance heating. The growth rate ranges from 2.0 to 4.3 A/s, depending on the laser power. A small decline in the growth rate in the relatively low laser power regime was observed. At higher laser powers, the growth rate is significantly increased. The lowest resistivity lines, 3 gQ-cm (close to the resistivity of bulk copper, 1.7 gQ-cm), has been achieved when deposited at 1.1 W of laser power. At this laser power, the substrate temperature is estimated to be 120 °C. The smallest line width, 0.8 gm, has been achieved when deposited without using the laser. The deposited lines become slightly wider for higher laser powers, causing the aspect ratio to be smaller. When deposited at high temperature, the deposited film becomes coarse and granular. Laser-assisted, FIB-induced deposition has been demonstrated as a means of 'writing high conductivity submicron Cu lines.

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Section: -3 Resistivitysupporting

confidence: 55%

Section: Resultsmentioning

confidence: 99%

Section: S Zl 2 2/3 Mi+m 2 )mentioning

confidence: 90%

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Laser assisted focused-ion-beam-induced deposition of copper

Funatsu

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…If needed, the higher resistivity can be compensated for by using a thicker deposit. In the case of copper and gold deposition the resistivity of the deposit can be reduced to near the value of pure metal by heating the substrate during deposition to about 100°C, 223,224 or by using local laser illumination. 225 An example of a rewired IC is shown in Fig.…”

Section: Applicationsmentioning

confidence: 99%

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

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General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges.

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“…In the case of ion beam induced deposition from a precursor gas, substrate heating, either global 8,9 or local, 10 was found to enhance the process by reducing the impurity content in the film, presumably due to reaction product desorption. The same mechanism may also enhance FIB gas assisted etching.…”

Section: Resultsmentioning

confidence: 99%